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Related Experiment Video

Updated: Jan 13, 2026

Optimized Fabrication Procedure for High-Quality Graphene-based Moir&#233; Superlattice Devices
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Scalable Graphene-MoS2 Lateral Contacts for High-Performance 2D Electronics.

Woonggi Hong1

  • 1Department of Convergence Semiconductor Engineering, Dankook University, 152 Jukjeon-ro, Suji-gu, Yongin-si 16890, Gyeonggi-do, Republic of Korea.

Materials (Basel, Switzerland)
|October 29, 2025
PubMed
Summary

Two-dimensional (2D) materials like molybdenum disulfide (MoS2) offer alternatives to silicon electronics. Fabricating graphene-MoS2 lateral heterostructures significantly reduces contact resistance and enhances field-effect mobility for advanced 2D devices.

Keywords:
contact propertiesfield-effect transistorsgrapheneheterostructuremolybdenum disulfide (MoS2)

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Silicon-based CMOS technology faces scaling limitations.
  • Two-dimensional (2D) materials, particularly MoS2, are promising for next-generation electronics.
  • High contact resistance at metal-MoS2 interfaces hinders device performance.

Purpose of the Study:

  • To fabricate and characterize graphene-MoS2 (Gr-MoS2) lateral heterostructure field-effect transistors (FETs).
  • To investigate the impact of using graphene as source and drain electrodes on device performance.
  • To address the bottleneck of contact resistance in MoS2-based electronics.

Main Methods:

  • Synthesis of monolayer graphene using inductively coupled plasma chemical vapor deposition (ICP-CVD).
  • Selective growth of bilayer MoS2 along graphene edges via edge-guided CVD, forming in-plane junctions.
  • Fabrication of Gr-MoS2 FETs without material transfer steps.
  • Electrical characterization including field-effect mobility and Y-function analysis.

Main Results:

  • Gr-MoS2 FETs demonstrated a threefold increase in average field-effect mobility (3.9 cm2 V-1 s-1) compared to conventional MoS2 FETs (1.1 cm2 V-1 s-1).
  • Contact resistance was significantly reduced from 85.8 kΩ to 20.5 kΩ at VG = 40 V.
  • Improvements attributed to the substitution of metal-MoS2 contacts with graphene-metal contacts.

Conclusions:

  • Lateral heterostructure engineering using graphene is an effective strategy for high-performance 2D electronics.
  • Chemically bonded in-plane junctions minimize transfer-induced defects and enhance device characteristics.
  • This approach offers a scalable solution for overcoming contact resistance limitations in 2D material-based devices.