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Woongkyu Lee

Showing results (1-10 of 17) with videos related to

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Nanoscale|May 22, 2025
Emergence of material-driven two-dimensional electron gas by thermodynamically robust layers in Al<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminate structuresKyunghun Lyu, Jiyoung Park, Hyun Jae Lee, et al.
ACS Applied Materials & Interfaces|November 26, 2014
Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodesYeon Woo Yoo, Woojin Jeon, Woongkyu Lee, et al.
ACS Applied Materials & Interfaces|August 8, 2012
Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 filmsSeong Keun Kim, Sora Han, Woojin Jeon, et al.
ACS Applied Materials & Interfaces|February 23, 2018
Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO<sub>3</sub> Thin FilmsMin Jung Chung, Woojin Jeon, Cheol Hyun An, et al.
ACS Applied Materials & Interfaces|April 25, 2019
Cs<sub>2</sub>SnI<sub>6</sub>-Encapsulated Multidye-Sensitized All-Solid-State Solar CellsByunghong Lee, Yamuna Ezhumalai, Woongkyu Lee, et al.
Materials Horizons|December 17, 2025
Suppression of interfacial layers in ZrO<sub>2</sub>/TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAMHyeongjun Kim, Juan Hong, Sangyeon Jeong, et al.
ACS Applied Materials & Interfaces|April 23, 2014
Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin filmsWoojin Jeon, Sang Ho Rha, Woongkyu Lee, et al.
ACS Applied Materials & Interfaces|November 13, 2018
Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO<sub>3</sub> Seed Layer on the Properties of RuO<sub>2</sub>/SrTiO<sub>3</sub>/Ru Capacitors for Dynamic Random Access Memory ApplicationsSang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
Scientific Reports|February 3, 2016
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phasesWoongkyu Lee, Sijung Yoo, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces|November 18, 2014
Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ filmWoojin Jeon, Sijung Yoo, Hyo Kyeom Kim, et al.
Pageof 2

Showing results (1-10 of 17) with videos related to

Sort By:
Pageof 2
Nanoscale|May 22, 2025
Emergence of material-driven two-dimensional electron gas by thermodynamically robust layers in Al<sub>2</sub>O<sub>3</sub>/In<sub>2</sub>O<sub>3</sub>/Al<sub>2</sub>O<sub>3</sub> nanolaminate structuresKyunghun Lyu, Jiyoung Park, Hyun Jae Lee, et al.
ACS Applied Materials & Interfaces|November 26, 2014
Structure and electrical properties of Al-doped HfO₂ and ZrO₂ films grown via atomic layer deposition on Mo electrodesYeon Woo Yoo, Woojin Jeon, Woongkyu Lee, et al.
ACS Applied Materials & Interfaces|August 8, 2012
Impact of bimetal electrodes on dielectric properties of TiO2 and Al-doped TiO2 filmsSeong Keun Kim, Sora Han, Woojin Jeon, et al.
ACS Applied Materials & Interfaces|February 23, 2018
Quantitative Analysis of the Incorporation Behaviors of Sr and Ti Atoms During the Atomic Layer Deposition of SrTiO<sub>3</sub> Thin FilmsMin Jung Chung, Woojin Jeon, Cheol Hyun An, et al.
ACS Applied Materials & Interfaces|April 25, 2019
Cs<sub>2</sub>SnI<sub>6</sub>-Encapsulated Multidye-Sensitized All-Solid-State Solar CellsByunghong Lee, Yamuna Ezhumalai, Woongkyu Lee, et al.
Materials Horizons|December 17, 2025
Suppression of interfacial layers in ZrO<sub>2</sub>/TiN capacitors by atomic layer deposition using ligand-engineered Zr precursors for scalable DRAMHyeongjun Kim, Juan Hong, Sangyeon Jeong, et al.
ACS Applied Materials & Interfaces|April 23, 2014
Controlling the Al-doping profile and accompanying electrical properties of rutile-phased TiO2 thin filmsWoojin Jeon, Sang Ho Rha, Woongkyu Lee, et al.
ACS Applied Materials & Interfaces|November 13, 2018
Effect of Growth Temperature during the Atomic Layer Deposition of the SrTiO<sub>3</sub> Seed Layer on the Properties of RuO<sub>2</sub>/SrTiO<sub>3</sub>/Ru Capacitors for Dynamic Random Access Memory ApplicationsSang Hyeon Kim, Woongkyu Lee, Cheol Hyun An, et al.
Scientific Reports|February 3, 2016
Resistance switching behavior of atomic layer deposited SrTiO3 film through possible formation of Sr2Ti6O13 or Sr1Ti11O20 phasesWoongkyu Lee, Sijung Yoo, Kyung Jean Yoon, et al.
ACS Applied Materials & Interfaces|November 18, 2014
Evaluating the top electrode material for achieving an equivalent oxide thickness smaller than 0.4 nm from an Al-doped TiO₂ filmWoojin Jeon, Sijung Yoo, Hyo Kyeom Kim, et al.
Pageof 2