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Small (Weinheim an Der Bergstrasse, Germany)|May 5, 2022
Hafnium Oxide (HfO2 ) - A Multifunctional Oxide: A Review on the Prospect and Challenges of Hafnium Oxide in Resistive Switching and Ferroelectric MemoriesWritam Banerjee, Alireza Kashir, Stanislav Kamba
Nanoscale|September 20, 2017
Electronic imitation of behavioral and psychological synaptic activities using TiOx/Al2O3-based memristor devicesWritam Banerjee, Qi Liu, Hangbing Lv, et al.
Nanoscale Research Letters|September 10, 2013
Impact of electrically formed interfacial layer and improved memory characteristics of IrOx/high-κx/W structures containing AlOx, GdOx, HfOx, and TaOx switching materialsAmit Prakash, Siddheswar Maikap, Writam Banerjee, et al.
ACS Omega|August 29, 2019
Variability Improvement of TiO /Al2O3 Bilayer Nonvolatile Resistive Switching Devices by Interfacial Band Engineering with an Ultrathin Al2O3 Dielectric MaterialWritam Banerjee, Xiaoxin Xu, Hangbing Lv, et al.
Scientific Reports|December 13, 2019
Near ideal synaptic functionalities in Li ion synaptic transistor using Li3POxSex electrolyte with high ionic conductivityRevannath Dnyandeo Nikam, Myonghoon Kwak, Jongwon Lee, et al.
Nanoscale|November 28, 2017
Intrinsic anionic rearrangement by extrinsic control: transition of RS and CRS in thermally elevated TiN/HfO2/Pt RRAMWritam Banerjee, Wu Fa Cai, Xiaolong Zhao, et al.
Small (Weinheim an Der Bergstrasse, Germany)|October 1, 2021
Ionic Sieving Through One-Atom-Thick 2D Material Enables Analog Nonvolatile Memory for Neuromorphic ComputingRevannath Dnyandeo Nikam, Jongwon Lee, Wooseok Choi, et al.
Nanoscale|December 11, 2014
High uniformity and improved nonlinearity by embedding nanocrystals in selector-less resistive random access memoryWritam Banerjee, Nianduan Lu, Ling Li, et al.
Nanoscale Advances|September 22, 2022
Transformation of threshold volatile switching to quantum point contact originated nonvolatile switching in graphene interface controlled memory devicesZuheng Wu, Xiaolong Zhao, Yang Yang, et al.
Scientific Reports|January 15, 2015
Evolution of conductive filament and its impact on reliability issues in oxide-electrolyte based resistive random access memoryHangbing Lv, Xiaoxin Xu, Hongtao Liu, et al.
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