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Zhonghua Wei Zhong Bing Ji Jiu Yi Xue
|
June 20, 2018
[Cholinergic anti-inflammatory pathway involves in the neuroprotective effect of huperzine A on sepsis-associated encephalopathy]
Weiping Huang, Senzhi Zhu, Xingqiang Liu, et al.
Nanoscale
|
October 10, 2018
Sub-kT/q switching in In<sub>2</sub>O<sub>3</sub> nanowire negative capacitance field-effect transistors
Meng Su, Xuming Zou, Youning Gong, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 14, 2018
Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS<sub>2</sub> and Black Phosphorus
Guoyun Gao, Bensong Wan, Xingqiang Liu, et al.
Optics Letters
|
November 4, 2025
Stable hysteresis-free and ultrahigh photoresponsivity top-gated BP transistors with PMMA/Al<sub>2</sub>O<sub>3</sub>/two-dimensional perovskite heterostructure dielectric
Liming Wang, Zhen Liu, Qianlei Tian, et al.
Nano Letters
|
December 8, 2022
Interlayer Transition Induced Infrared Response in ReS<sub>2</sub>/2D Perovskite van der Waals Heterostructure Photodetector
Wanhan Su, Sen Zhang, Chang Liu, et al.
Global Medical Genetics
|
August 23, 2024
Gene Mutations in Gastrointestinal Stromal Tumors: Advances in Treatment and Mechanism Research
Lei Cao, Wencong Tian, Yongjie Zhao, et al.
Nano Letters
|
June 15, 2012
Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors
Xingqiang Liu, Chunlan Wang, Bo Cai, et al.
ACS Nano
|
September 7, 2018
In<sub>2</sub>O<sub>3</sub> Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
Qian Xu, Xingqiang Liu, Bensong Wan, et al.
Nanotechnology
|
January 7, 2021
Hysteresis-free MoS<sub>2</sub> metal semiconductor field-effect transistors with van der Waals Schottky junction
Da Wan, Qixia Wang, Hao Huang, et al.
Nano Letters
|
December 23, 2024
High Current Gain MoS<sub>2</sub> Bipolar Junction Transistor Based on Metal-Semiconductor Schottky Contacts
Shichao Wang, Qingliang Liu, Wencheng Niu, et al.
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Showing results (11-20 of 61) with videos related to
Sort By:
Page
of 7
Zhonghua Wei Zhong Bing Ji Jiu Yi Xue
|
June 20, 2018
[Cholinergic anti-inflammatory pathway involves in the neuroprotective effect of huperzine A on sepsis-associated encephalopathy]
Weiping Huang, Senzhi Zhu, Xingqiang Liu, et al.
Nanoscale
|
October 10, 2018
Sub-kT/q switching in In<sub>2</sub>O<sub>3</sub> nanowire negative capacitance field-effect transistors
Meng Su, Xuming Zou, Youning Gong, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
February 14, 2018
Tunable Tribotronic Dual-Gate Logic Devices Based on 2D MoS<sub>2</sub> and Black Phosphorus
Guoyun Gao, Bensong Wan, Xingqiang Liu, et al.
Optics Letters
|
November 4, 2025
Stable hysteresis-free and ultrahigh photoresponsivity top-gated BP transistors with PMMA/Al<sub>2</sub>O<sub>3</sub>/two-dimensional perovskite heterostructure dielectric
Liming Wang, Zhen Liu, Qianlei Tian, et al.
Nano Letters
|
December 8, 2022
Interlayer Transition Induced Infrared Response in ReS<sub>2</sub>/2D Perovskite van der Waals Heterostructure Photodetector
Wanhan Su, Sen Zhang, Chang Liu, et al.
Global Medical Genetics
|
August 23, 2024
Gene Mutations in Gastrointestinal Stromal Tumors: Advances in Treatment and Mechanism Research
Lei Cao, Wencong Tian, Yongjie Zhao, et al.
Nano Letters
|
June 15, 2012
Rational design of amorphous indium zinc oxide/carbon nanotube hybrid film for unique performance transistors
Xingqiang Liu, Chunlan Wang, Bo Cai, et al.
ACS Nano
|
September 7, 2018
In<sub>2</sub>O<sub>3</sub> Nanowire Field-Effect Transistors with Sub-60 mV/dec Subthreshold Swing Stemming from Negative Capacitance and Their Logic Applications
Qian Xu, Xingqiang Liu, Bensong Wan, et al.
Nanotechnology
|
January 7, 2021
Hysteresis-free MoS<sub>2</sub> metal semiconductor field-effect transistors with van der Waals Schottky junction
Da Wan, Qixia Wang, Hao Huang, et al.
Nano Letters
|
December 23, 2024
High Current Gain MoS<sub>2</sub> Bipolar Junction Transistor Based on Metal-Semiconductor Schottky Contacts
Shichao Wang, Qingliang Liu, Wencheng Niu, et al.
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