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ACS Nano
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December 9, 2025
Atomically Resolved Defects Modulate Electronic Structure in Plasma-Assisted 2D Janus MoSSe Monolayers
Zi-Liang Yang, Yu-Chieh Lin, Mayur Chaudhary, et al.
ACS Nano
|
January 30, 2023
Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics
Po-Hsun Ho, Jun-Ru Chang, Chun-Hsiang Chen, et al.
ACS Nano
|
March 28, 2019
Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites
Hung-Chang Hsu, Bo-Chao Huang, Shu-Cheng Chin, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 29, 2015
Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer
Po-Hsun Ho, Chun-Hsiang Chen, Fu-Yu Shih, et al.
ACS Applied Materials & Interfaces
|
April 21, 2022
Internal Built-In Electric Fields at Organic-Inorganic Interfaces of Two-Dimensional Ruddlesden-Popper Perovskite Single Crystals
Cheng-Chieh Lin, Kai-Di Yang, Min-Chuan Shih, et al.
Nature Communications
|
March 14, 2026
Electrostatically tunable moiré-mediated Wigner states via interfacial potential engineering in 2D van der Waals heterostructures
Hao-Yu Chen, Hung-Chang Hsu, Li-Sheng Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
November 27, 2015
Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light
Jheng-Cyuan Lin, Vu Thanh Tra, Dung-Sheng Tsai, et al.
Nature Communications
|
March 21, 2025
Large-scale alkali-assisted growth of monolayer and bilayer WSe<sub>2</sub> with a low defect density
Sui-An Chou, Chen Chang, Bo-Hong Wu, et al.
ACS Applied Materials & Interfaces
|
May 15, 2024
Nonvolatile Modulation of Bi<sub>2</sub>O<sub>2</sub>Se/Pb(Zr,Ti)O<sub>3</sub> Heteroepitaxy
Yong-Jyun Wang, Zi-Liang Yang, Jia-Wei Chen, et al.
ACS Nano
|
May 26, 2026
Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi<sub>2</sub>O<sub>2</sub>Se Transistors
Huynh-Uyen-Phuong Nguyen, Tai-Ting Lee, Yu-Wei Chang, et al.
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Search research articles
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Showing results (21-30 of 35) with videos related to
Sort By:
Page
of 4
ACS Nano
|
December 9, 2025
Atomically Resolved Defects Modulate Electronic Structure in Plasma-Assisted 2D Janus MoSSe Monolayers
Zi-Liang Yang, Yu-Chieh Lin, Mayur Chaudhary, et al.
ACS Nano
|
January 30, 2023
Hysteresis-Free Contact Doping for High-Performance Two-Dimensional Electronics
Po-Hsun Ho, Jun-Ru Chang, Chun-Hsiang Chen, et al.
ACS Nano
|
March 28, 2019
Photodriven Dipole Reordering: Key to Carrier Separation in Metalorganic Halide Perovskites
Hung-Chang Hsu, Bo-Chao Huang, Shu-Cheng Chin, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
October 29, 2015
Precisely Controlled Ultrastrong Photoinduced Doping at Graphene-Heterostructures Assisted by Trap-State-Mediated Charge Transfer
Po-Hsun Ho, Chun-Hsiang Chen, Fu-Yu Shih, et al.
ACS Applied Materials & Interfaces
|
April 21, 2022
Internal Built-In Electric Fields at Organic-Inorganic Interfaces of Two-Dimensional Ruddlesden-Popper Perovskite Single Crystals
Cheng-Chieh Lin, Kai-Di Yang, Min-Chuan Shih, et al.
Nature Communications
|
March 14, 2026
Electrostatically tunable moiré-mediated Wigner states via interfacial potential engineering in 2D van der Waals heterostructures
Hao-Yu Chen, Hung-Chang Hsu, Li-Sheng Lin, et al.
Advanced Materials (Deerfield Beach, Fla.)
|
November 27, 2015
Control of the Metal-Insulator Transition at Complex Oxide Heterointerfaces through Visible Light
Jheng-Cyuan Lin, Vu Thanh Tra, Dung-Sheng Tsai, et al.
Nature Communications
|
March 21, 2025
Large-scale alkali-assisted growth of monolayer and bilayer WSe<sub>2</sub> with a low defect density
Sui-An Chou, Chen Chang, Bo-Hong Wu, et al.
ACS Applied Materials & Interfaces
|
May 15, 2024
Nonvolatile Modulation of Bi<sub>2</sub>O<sub>2</sub>Se/Pb(Zr,Ti)O<sub>3</sub> Heteroepitaxy
Yong-Jyun Wang, Zi-Liang Yang, Jia-Wei Chen, et al.
ACS Nano
|
May 26, 2026
Selective Defect Engineering for Gate-Controlled yet Contact-Transparent Bi<sub>2</sub>O<sub>2</sub>Se Transistors
Huynh-Uyen-Phuong Nguyen, Tai-Ting Lee, Yu-Wei Chang, et al.
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