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Yannick Raffel

Showing results (1-10 of 4) with videos related to

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ACS Applied Electronic Materials|March 6, 2023
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit OperationMasud Rana Sk, Sunanda Thunder, David Lehninger, et al.
ACS Applied Electronic Materials|November 28, 2022
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing ApplicationsYannick Raffel, Sourav De, Maximilian Lederer, et al.
ACS Applied Materials & Interfaces|May 4, 2026
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric TransistorsApu Das, Agniva Paul, Mohit Tewari, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
Pageof 1

Showing results (1-10 of 4) with videos related to

Sort By:
Pageof 1
ACS Applied Electronic Materials|March 6, 2023
Ferroelectric Content-Addressable Memory Cells with IGZO Channel: Impact of Retention Degradation on the Multibit OperationMasud Rana Sk, Sunanda Thunder, David Lehninger, et al.
ACS Applied Electronic Materials|November 28, 2022
Synergistic Approach of Interfacial Layer Engineering and READ-Voltage Optimization in HfO<sub>2</sub>-Based FeFETs for In-Memory-Computing ApplicationsYannick Raffel, Sourav De, Maximilian Lederer, et al.
ACS Applied Materials & Interfaces|May 4, 2026
Endurance Paradox in Hafnium-Oxide-Based Silicon-Channel Ferroelectric TransistorsApu Das, Agniva Paul, Mohit Tewari, et al.
ACS Nano|March 31, 2026
Sub-2 nm Equivalent-Oxide-Thickness Ferroelectric Transistors for Cryogenic Memory and ComputingApu Das, Asim Senapati, Gautham Kumar, et al.
Pageof 1