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Optics Letters|April 30, 2021
High-speed and high-responsivity p-i-n waveguide photodetector at a 2 µm wavelength with a Ge0.92Sn0.08/Ge multiple-quantum-well active layerHaibo Wang, Jishen Zhang, Gong Zhang, et al.
Optics Express|October 7, 2021
Strain-relaxed GeSn-on-insulator (GeSnOI) microdisksDaniel Burt, Hyo-Jun Joo, Yongduck Jung, et al.
Nano Letters|July 10, 2013
Highly selective dry etching of germanium over germanium-tin (Ge(1-x)Sn(x)): a novel route for Ge(1-x)Sn(x) nanostructure fabricationSuyog Gupta, Robert Chen, Yi-Chiau Huang, et al.
Optics Express|March 17, 2019
High-speed photo detection at two-micron-wavelength: technology enablement by GeSn/Ge multiple-quantum-well photodiode on 300 mm Si substrateShengqiang Xu, Wei Wang, Yi-Chiau Huang, et al.
ACS Nano|June 23, 2023
A Route toward High-Detectivity and Low-Cost Short-Wave Infrared Photodetection: GeSn/Ge Multiple-Quantum-Well Photodetectors with a Dielectric Nanohole Array MetasurfaceQimiao Chen, Hao Zhou, Shengqiang Xu, et al.
Optics Express|November 13, 2020
Photo detection and modulation from 1,550 to 2,000 nm realized by a GeSn/Ge multiple-quantum-well photodiode on a 300-mm Si substrateHao Zhou, Shengqiang Xu, Shaoteng Wu, et al.
Optics Express|August 19, 2018
GeSn lateral p-i-n photodetector on insulating substrateShengqiang Xu, Yi-Chiau Huang, Kwang Hong Lee, et al.
Nano Letters|December 5, 2013
Demonstration of a Ge/GeSn/Ge quantum-well microdisk resonator on silicon: enabling high-quality Ge(Sn) materials for micro- and nanophotonicsRobert Chen, Suyog Gupta, Yi-Chiau Huang, et al.
Optics Express|April 1, 2020
High-efficiency GeSn/Ge multiple-quantum-well photodetectors with photon-trapping microstructures operating at 2 µmHao Zhou, Shengqiang Xu, Yiding Lin, et al.
Optics Express|May 3, 2018
High-performance GeSn photodetector and fin field-effect transistor (FinFET) on an advanced GeSn-on-insulator platformWei Wang, Dian Lei, Yi-Chiau Huang, et al.
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