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Micromachines|January 6, 2021
Post-Moore Memory Technology: Sneak Path Current (SPC) Phenomena on RRAM Crossbar Array and SolutionsYing-Chen Chen, Chao-Cheng Lin, Yao-Feng ChangNanoscale|August 10, 2018
Graphite-based selectorless RRAM: improvable intrinsic nonlinearity for array applicationsYing-Chen Chen, Szu-Tung Hu, Chih-Yang Lin, et al.Scientific Reports|August 29, 2019
A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained Selectorless RRAM applicationYing-Chen Chen, Chao-Cheng Lin, Szu-Tung Hu, et al.Physical Chemistry Chemical Physics : PCCP|December 15, 2015
A study of the interfacial resistive switching mechanism by proton exchange reactions on the SiO(x) layerFei Zhou, Yao-Feng Chang, Ying-Chen Chen, et al.Micromachines|January 21, 2023
Editorial for the Special Issue on the Progress of Emerging Hardware Development for Post-Moore's ComputingYao-Feng ChangScientific Reports|February 17, 2016
Demonstration of Synaptic Behaviors and Resistive Switching Characterizations by Proton Exchange Reactions in Silicon OxideYao-Feng Chang, Burt Fowler, Ying-Chen Chen, et al.Nanoscale Research Letters|August 25, 2018
Dual Functions of V/SiO<sub>x</sub>/AlO<sub>y</sub>/p<sup>++</sup>Si Device as Selector and MemorySungjun Kim, Chih-Yang Lin, Min-Hwi Kim, et al.Physical Chemistry Chemical Physics : PCCP|July 14, 2017
Ultralow power switching in a silicon-rich SiN<sub>y</sub>/SiN<sub>x</sub> double-layer resistive memory deviceSungjun Kim, Yao-Feng Chang, Min-Hwi Kim, et al.Small (Weinheim an Der Bergstrasse, Germany)|April 18, 2018
Scaling Effect on Silicon Nitride Memristor with Highly Doped Si SubstrateSungjun Kim, Sunghun Jung, Min-Hwi Kim, et al.Suicide & Life-Threatening Behavior|August 27, 2022
Longitudinal mediation by perceived burden of the pathway from thwarted belonging to suicidal ideationChao-Cheng Lin, Richard J LinscottPageof 14