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A Novel Resistive Switching Identification Method through Relaxation Characteristics for Sneak-path-constrained

Ying-Chen Chen1, Chao-Cheng Lin2, Szu-Tung Hu3

  • 1Microelectronics Research Center, Department of Electrical and Computer Engineering, The University of Texas at Austin, Austin, TX, 78758, USA. yingchenchen@utexas.edu.

Scientific Reports
|August 29, 2019
PubMed
Summary

Bilayer selectorless RRAM devices show intrinsic nonlinearity, effectively suppressing sneak path currents in memory arrays. This research offers design insights for reliable, high-performance nonvolatile memory applications.

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