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Optics Express
|
September 10, 2020
Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Michael Hollenbach, Yonder Berencén, Ulrich Kentsch, et al.
Optics Express
|
October 6, 2012
Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions
Sébastien Cueff, Christophe Labbé, Olivier Jambois, et al.
Nanotechnology
|
February 7, 2015
Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics
Joan Manel Ramírez, Jacek Wojcik, Yonder Berencén, et al.
Scientific Reports
|
March 7, 2017
Room-temperature short-wavelength infrared Si photodetector
Yonder Berencén, Slawomir Prucnal, Fang Liu, et al.
Nanoscale
|
August 31, 2013
Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS
Alberto Eljarrat, Lluís López-Conesa, José Manuel Rebled, et al.
Nanoscale Advances
|
February 9, 2023
Formation of a vertical SnSe/SnSe<sub>2</sub> p-n heterojunction by NH<sub>3</sub> plasma-induced phase transformation
Yi Li, Juanmei Duan, Yonder Berencén, et al.
Optics Express
|
September 15, 2023
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Mohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, et al.
Scientific Reports
|
June 11, 2016
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal, Fang Liu, Matthias Voelskow, et al.
Scientific Reports
|
March 9, 2018
On the insulator-to-metal transition in titanium-implanted silicon
Fang Liu, Mao Wang, Yonder Berencén, et al.
Nature Communications
|
December 12, 2022
Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Michael Hollenbach, Nico Klingner, Nagesh S Jagtap, et al.
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of 2
Search research articles
Search
Showing results (1-10 of 14) with videos related to
Sort By:
Page
of 2
Optics Express
|
September 10, 2020
Engineering telecom single-photon emitters in silicon for scalable quantum photonics
Michael Hollenbach, Yonder Berencén, Ulrich Kentsch, et al.
Optics Express
|
October 6, 2012
Structural factors impacting carrier transport and electroluminescence from Si nanocluster-sensitized Er ions
Sébastien Cueff, Christophe Labbé, Olivier Jambois, et al.
Nanotechnology
|
February 7, 2015
Amorphous sub-nanometre Tb-doped SiO(x)N(y)/SiO2 superlattices for optoelectronics
Joan Manel Ramírez, Jacek Wojcik, Yonder Berencén, et al.
Scientific Reports
|
March 7, 2017
Room-temperature short-wavelength infrared Si photodetector
Yonder Berencén, Slawomir Prucnal, Fang Liu, et al.
Nanoscale
|
August 31, 2013
Structural and compositional properties of Er-doped silicon nanoclusters/oxides for multilayered photonic devices studied by STEM-EELS
Alberto Eljarrat, Lluís López-Conesa, José Manuel Rebled, et al.
Nanoscale Advances
|
February 9, 2023
Formation of a vertical SnSe/SnSe<sub>2</sub> p-n heterojunction by NH<sub>3</sub> plasma-induced phase transformation
Yi Li, Juanmei Duan, Yonder Berencén, et al.
Optics Express
|
September 15, 2023
On-chip lateral Si:Te PIN photodiodes for room-temperature detection in the telecom optical wavelength bands
Mohd Saif Shaikh, Shuyu Wen, Mircea-Traian Catuneanu, et al.
Scientific Reports
|
June 11, 2016
Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal, Fang Liu, Matthias Voelskow, et al.
Scientific Reports
|
March 9, 2018
On the insulator-to-metal transition in titanium-implanted silicon
Fang Liu, Mao Wang, Yonder Berencén, et al.
Nature Communications
|
December 12, 2022
Wafer-scale nanofabrication of telecom single-photon emitters in silicon
Michael Hollenbach, Nico Klingner, Nagesh S Jagtap, et al.
Page
of 2