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Related Experiment Video

Updated: Dec 9, 2025

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
12:19

Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

Published on: April 4, 2017

8.7K

Engineering telecom single-photon emitters in silicon for scalable quantum photonics.

Michael Hollenbach, Yonder Berencén, Ulrich Kentsch

    Optics Express
    |September 10, 2020
    PubMed
    Summary
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    Researchers developed bright infrared single-photon sources on silicon-on-insulator (SOI) wafers. These stable G-center emitters are compatible with silicon technology for quantum computing applications.

    Area of Science:

    • Quantum photonics
    • Solid-state physics
    • Materials science

    Background:

    • Developing bright and stable single-photon sources is crucial for quantum technologies.
    • Silicon photonics offers a scalable platform for integrated quantum devices.

    Purpose of the Study:

    • To create and characterize bright, stable single-photon emitters in silicon-on-insulator (SOI) wafers.
    • To explore the potential of these emitters for integrated quantum photonic platforms.

    Main Methods:

    • Fabrication and isolation of single-photon emitters in commercial SOI wafers.
    • Optical characterization of emission properties, including brightness, spectral features, and photostability.
    • Identification of the emitter origin as a carbon-related G-center.

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    Related Experiment Videos

    Last Updated: Dec 9, 2025

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source
    12:19

    Measurement of Quantum Interference in a Silicon Ring Resonator Photon Source

    Published on: April 4, 2017

    8.7K
    Generation and Coherent Control of Pulsed Quantum Frequency Combs
    06:42

    Generation and Coherent Control of Pulsed Quantum Frequency Combs

    Published on: June 8, 2018

    9.5K
    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping
    14:58

    Silicon Metal-oxide-semiconductor Quantum Dots for Single-electron Pumping

    Published on: June 3, 2015

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    Main Results:

    • Achieved single-photon emitters with brightness up to 10^5 counts per second.
    • Observed narrow zero-phonon line emission in the telecom O-band with high photostability.
    • Attributed emitters to G-centers, enabling isotopic purification.

    Conclusions:

    • Demonstrated a viable route for bright, stable single-photon sources in silicon.
    • Proposed an integrated quantum photonic platform concept using SOI technology.
    • Results pave the way for silicon-compatible quantum processors, repeaters, and sensors.