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Journal of Chromatography. B, Analytical Technologies in the Biomedical and Life Sciences|June 25, 2013
Identification of honokiol metabolites in rats by the method of stable isotope cluster technique and ultra-high performance liquid chromatography/quadrupole-time-of-flight mass spectrometryHuijun Lai, Minghai Tang, Juan Liu, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
Investigation on Ge0.8Si0.2-Selective Atomic Layer Wet-Etching of Ge for Vertical Gate-All-Around NanodeviceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 27, 2023
High-Quality Recrystallization of Amorphous Silicon on Si (100) Induced via Laser Annealing at the NanoscaleZhuo Chen, Huilong Zhu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)|June 10, 2023
Investigation on Recrystallization Channel for Vertical C-Shaped-Channel Nanosheet FETs by Laser AnnealingZhuo Chen, Huilong Zhu, Guilei Wang, et al.
Nanomaterials (Basel, Switzerland)|September 3, 2020
Strained Si0.2Ge0.8/Ge multilayer Stacks Epitaxially Grown on a Low-/high-Temperature Ge Buffer Layer and Selective Wet-Etching of GermaniumLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|February 3, 2021
Cryogenic Transport Characteristics of P-Type Gate-All-Around Silicon Nanowire MOSFETsJie Gu, Qingzhu Zhang, Zhenhua Wu, et al.
ACS Applied Materials & Interfaces|September 24, 2020
Selective Digital Etching of Silicon-Germanium Using Nitric and Hydrofluoric AcidsChen Li, Huilong Zhu, Yongkui Zhang, et al.
Nanomaterials (Basel, Switzerland)|June 2, 2021
The Effect of Doping on the Digital Etching of Silicon-Selective Silicon-Germanium Using Nitric AcidsYangyang Li, Huilong Zhu, Zhenzhen Kong, et al.
Nano Letters|May 26, 2021
First Demonstration of Novel Vertical Gate-All-Around Field-Effect-Transistors Featured by Self-Aligned and Replaced High-κ Metal GatesChen Li, Huilong Zhu, Yongkui Zhang, et al.
ACS Applied Materials & Interfaces|January 25, 2022
A Polarization-Switching, Charge-Trapping, Modulated Arithmetic Logic Unit for In-Memory Computing Based on Ferroelectric Fin Field-Effect TransistorsZhaohao Zhang, Yanna Luo, Yan Cui, et al.
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