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ACS Nano|October 12, 2023
Demonstration of Germanium Vertical Gate-All-Around Field-Effect Transistors Featured by Self-Aligned High-κ Metal Gates with Record High PerformanceLu Xie, Huilong Zhu, Yongkui Zhang, et al.
Materials (Basel, Switzerland)|February 13, 2020
A Novel Dry Selective Isotropic Atomic Layer Etching of SiGe for Manufacturing Vertical Nanowire Array with Diameter Less than 20 nmJunjie Li, Yongliang Li, Na Zhou, et al.
Nanomaterials (Basel, Switzerland)|May 24, 2024
CMOS Scaling for the 5 nm Node and Beyond: Device, Process and TechnologyHenry H Radamson, Yuanhao Miao, Ziwei Zhou, et al.
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