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Nano Letters|March 4, 2010
Measurement of active dopant distribution and diffusion in individual silicon nanowiresElad Koren, Noel Berkovitch, Yossi Rosenwaks
Nanomaterials (Basel, Switzerland)|December 1, 2020
Schottky Barrier Height and Image Force Lowering in Monolayer MoS2 Field Effect TransistorsYonatan Vaknin, Ronen Dagan, Yossi Rosenwaks
Nanomaterials (Basel, Switzerland)|June 19, 2019
Pinch-Off Formation in Monolayer and Multilayers MoS2 Field-Effect TransistorsYonatan Vaknin, Ronen Dagan, Yossi Rosenwaks
ACS Applied Materials & Interfaces|December 10, 2015
Impact of Dopant Compensation on Graded p-n Junctions in Si NanowiresIddo Amit, Nari Jeon, Lincoln J Lauhon, et al.
The Journal of Physical Chemistry. B|December 27, 2014
Evidence for deep acceptor centers in plant photosystem I crystalsIrina Volotsenko, Michel Molotskii, Anna Borovikova, et al.
Nano Letters|October 10, 2014
Density and energy distribution of interface states in the grain boundaries of polysilicon nanowireIddo Amit, Danny Englander, Dror Horvitz, et al.
Nanotechnology|August 7, 2015
Potential barrier height at the grain boundaries of a poly-silicon nanowireAssaf Shamir, Iddo Amit, Danny Englander, et al.
ACS Applied Materials & Interfaces|November 15, 2019
Accurate Method To Determine the Mobility of Transition-Metal Dichalcogenides with Incomplete Gate ScreeningRonen Dagan, Yonatan Vaknin, Dror Weisman, et al.
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