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Nanotechnology|September 22, 2012
Evaluation of Seebeck coefficients in n- and p-type silicon nanowires fabricated by complementary metal-oxide-semiconductor technologyYounghoon Hyun, Youngsam Park, Wonchul Choi, et al.Nanoscale Research Letters|November 16, 2010
The Characteristics of Seebeck Coefficient in Silicon Nanowires Manufactured by CMOS Compatible ProcessMoongyu Jang, Youngsam Park, Myungsim Jun, et al.Journal of Nanoscience and Nanotechnology|November 23, 2011
Electrical characterization of n/p-type nickel silicide/silicon junctions by Sb segregationMyungsim Jun, Youngsam Park, Younghoon Hyun, et al.Journal of Nanoscience and Nanotechnology|November 12, 2013
Seebeck coefficient characterization of highly doped n- and p-type silicon nanowires for thermoelectric device applications fabricated with top-down approachJaehyeon Kim, Younghoon Hyun, Youngsam Park, et al.Journal of Nanoscience and Nanotechnology|August 2, 2012
Top-down processed silicon nanowires for thermoelectric applicationsMoongyu Jang, Youngsam Park, Younghoon Hyun, et al.Journal of Nanoscience and Nanotechnology|November 26, 2013
Effect of silicide/silicon hetero-junction structure on thermal conductivity and Seebeck coefficientWonchul Choi, Young-Sam Park, Younghoon Hyun, et al.Pageof 1