Top-down processed silicon nanowires for thermoelectric applications

Area of Science:

• Materials Science
• Solid State Physics
• Nanotechnology

Background:

• Silicon nanowires are promising for thermoelectric energy harvesting.
• Understanding their thermoelectric properties is crucial for device development.
• Previous studies have explored various silicon nanowire dimensions and doping types.

Purpose of the Study:

• To investigate the thermoelectric properties of 50 nm wide n-type silicon nanowires.
• To fabricate and characterize nanowire test structures for property measurement.
• To determine the Seebeck coefficient and power factor of these specific nanowires.

Main Methods:

• Fabrication of 50 nm wide n-type silicon nanowires using a top-down process.
• Creation of test structures with integrated platinum heaters and temperature sensors.
• Measurement of temperature coefficient of resistance (TCR) for sensors.
• Extraction of Seebeck coefficient and power factor from fabricated nanowires.

Main Results:

• The temperature coefficient of resistance (TCR) of the platinum sensors was determined to be 786.6 PPM/K.
• The 50 nm wide phosphorus-doped n-type silicon nanowires exhibited a Seebeck coefficient of -118 µV/K.
• A power factor of 2.16 mW·K⁻²·m⁻¹ was achieved for the silicon nanowires.

Conclusions:

• The study successfully characterized the thermoelectric performance of 50 nm n-type silicon nanowires.
• The obtained Seebeck coefficient and power factor values provide essential data for thermoelectric device design.
• These findings contribute to the advancement of silicon-based thermoelectric materials.