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Nanoscale
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October 14, 2025
Phase control in polymorphic transformation-based nonvolatile memory devices for reliable data reading in X-point structures
Shunsuke Mori, Shogo Hatayama, Yuji Sutou
ACS Applied Materials & Interfaces
|
August 28, 2023
Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors
Shunsuke Mori, Hiroshi Tanimura, Tetsu Ichitsubo, et al.
Science (New York, N.Y.)
|
July 28, 2016
A lightweight shape-memory magnesium alloy
Yukiko Ogawa, Daisuke Ando, Yuji Sutou, et al.
Materials Horizons
|
September 13, 2023
Negative differential resistance based on phase transformation
Takashi Harumoto, Hiroyuki Fujiki, Ji Shi, et al.
Nature Communications
|
January 5, 2020
Reversible displacive transformation in MnTe polymorphic semiconductor
Shunsuke Mori, Shogo Hatayama, Yi Shuang, et al.
ACS Applied Materials & Interfaces
|
September 23, 2022
Understanding the Origin of Low-Energy Operation Characteristics for Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device
Shogo Hatayama, Takuya Yamamoto, Shunsuke Mori, et al.
Materials Horizons
|
September 30, 2024
An amorphous Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Yinli Wang, Yi Shuang, Mihyeon Kim, et al.
Materials Horizons
|
October 14, 2024
Correction: An amorphous Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Yinli Wang, Yi Shuang, Mihyeon Kim, et al.
ACS Nano
|
January 16, 2024
Nonvolatile Isomorphic Valence Transition in SmTe Films
Shogo Hatayama, Shunsuke Mori, Yuta Saito, et al.
Scientific Reports
|
March 9, 2021
Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material
Yuta Saito, Shogo Hatayama, Yi Shuang, et al.
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Search research articles
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Showing results (1-10 of 22) with videos related to
Sort By:
Page
of 3
Nanoscale
|
October 14, 2025
Phase control in polymorphic transformation-based nonvolatile memory devices for reliable data reading in X-point structures
Shunsuke Mori, Shogo Hatayama, Yuji Sutou
ACS Applied Materials & Interfaces
|
August 28, 2023
Photoinduced Nonvolatile Displacive Transformation and Optical Switching in MnTe Semiconductors
Shunsuke Mori, Hiroshi Tanimura, Tetsu Ichitsubo, et al.
Science (New York, N.Y.)
|
July 28, 2016
A lightweight shape-memory magnesium alloy
Yukiko Ogawa, Daisuke Ando, Yuji Sutou, et al.
Materials Horizons
|
September 13, 2023
Negative differential resistance based on phase transformation
Takashi Harumoto, Hiroyuki Fujiki, Ji Shi, et al.
Nature Communications
|
January 5, 2020
Reversible displacive transformation in MnTe polymorphic semiconductor
Shunsuke Mori, Shogo Hatayama, Yi Shuang, et al.
ACS Applied Materials & Interfaces
|
September 23, 2022
Understanding the Origin of Low-Energy Operation Characteristics for Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub> Phase-Change Material: Enhancement of Thermal Efficiency in the High-Scaled Memory Device
Shogo Hatayama, Takuya Yamamoto, Shunsuke Mori, et al.
Materials Horizons
|
September 30, 2024
An amorphous Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Yinli Wang, Yi Shuang, Mihyeon Kim, et al.
Materials Horizons
|
October 14, 2024
Correction: An amorphous Cr<sub>2</sub>Ge<sub>2</sub>Te<sub>6</sub>/polyimide double-layer foil with an extraordinarily outstanding strain sensing ability
Yinli Wang, Yi Shuang, Mihyeon Kim, et al.
ACS Nano
|
January 16, 2024
Nonvolatile Isomorphic Valence Transition in SmTe Films
Shogo Hatayama, Shunsuke Mori, Yuta Saito, et al.
Scientific Reports
|
March 9, 2021
Dimensional transformation of chemical bonding during crystallization in a layered chalcogenide material
Yuta Saito, Shogo Hatayama, Yi Shuang, et al.
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of 3