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Physical Chemistry Chemical Physics : PCCP|November 11, 2024
Ballistic transport in sub-10 nm monolayer InAs transistors for high-performance applicationsTianruo Xie, Yuliang Mao
Journal of Physics. Condensed Matter : an Institute of Physics Journal|July 7, 2026
Tunable electronic characteristics and Schottky barrier of Si₂P₃/MoSSe van der Waals heterostructures by electric field and strain modulationXiandong Zeng, Yuliang Mao
Physical Chemistry Chemical Physics : PCCP|May 1, 2026
Breaking the Boltzmann limit in sub-5 nm monolayer CdPS<sub>3</sub> transistorsManzhou Wang, Yuliang Mao
Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 2, 2023
First-principles design of g-CYuliang Mao, Zhiwei Zhang, Xing Zhou
Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Density functional calculation of transition metal adatom adsorption on grapheneYuliang Mao, Jianmei Yuan, Jianxin Zhong
Physical Chemistry Chemical Physics : PCCP|January 7, 2025
Controllable spin rectification behavior of vertical and lateral VSe<sub>2</sub>/WSe<sub>2</sub> heterojunction Schottky diodesXianghe Liu, Hui Chen, Yuxuan Li, et al.
Physical Chemistry Chemical Physics : PCCP|June 23, 2022
A two-dimensional α-As/α-AsP van der Waals heterostructure for photovoltaic applicationsYuliang Mao, Chuangqing Qin, Jing Wang, et al.
Journal of Physics. Condensed Matter : an Institute of Physics Journal|August 1, 2018
Functionalization of the electronic and magnetic properties of silicene by halogen atoms unilateral adsorption: a first-principles studyYuliang Mao, Haiqiao Xu, Jianmei Yuan, et al.
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