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Scientific Reports|January 31, 2019
Mechanism of carrier controllability with metal capping layer on amorphous oxide SiZnSnO semiconductorByeong Hyeon Lee, Ahrum Sohn, Sangsig Kim, et al.
Nanotechnology|October 29, 2011
Flexible logic gates composed of high performance GaAs-nanowire-based MESFETs with MHz-dynamic operationsChangjoon Yoon, Taeho Moon, Myeongwon Lee, et al.
Optics Express|February 8, 2013
Ultra-highly sensitive optical gas sensors based on chemomechanical polymer-incorporated fiber interferometerMi-Kyung Bae, Jung Ah Lim, Sangsig Kim, et al.
Journal of Nanoscience and Nanotechnology|April 2, 2011
Fabrication of nanometer-scale carbon nanotube field-effect transistors on flexible and transparent substrateTae-Geun Kim, Jongseung Hwang, Jeongmin Kang, et al.
Journal of Nanoscience and Nanotechnology|March 14, 2021
Effect of Ge Mole Fraction on Performance of Underlapped Gate-All-Around SiGe-Source Tunneling Field-Effect TransistorsJuhee Jeon, Young-Soo Park, Sola Woo, et al.
Journal of Nanoscience and Nanotechnology|November 12, 2013
The effect of trapped charge on silicon nanowire pseudo-MOSFETsIncheol Nam, Minsuk Kim, Syed Faraz Najam, et al.
Journal of Nanoscience and Nanotechnology|August 3, 2012
Synthesis and structural-optical properties of Ga-doped ZnO nanowires by hot-walled pulsed laser deposition methodKyoungwon Kim, Dong-Yun Lee, Dong-Hoon Park, et al.
Nanoscale Research Letters|October 12, 2011
Effects of silver impurity on the structural, electrical, and optical properties of ZnO nanowiresKyoungwon Kim, Pulak Chandra Debnath, Deuk-Hee Lee, et al.
ACS Applied Materials & Interfaces|September 9, 2011
Si-based flexible memristive systems constructed using top-down methodsTaeho Moon, Jeongmin Kang, Yong Han, et al.
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