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Ziguang Ma

Showing results (1-10 of 9) with videos related to

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Scientific Reports|December 18, 2013
A novel wavelength-adjusting method in InGaN-based light-emitting diodesZhen Deng, Yang Jiang, Ziguang Ma, et al.
Scientific Reports|February 28, 2017
The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applicationsHaojun Yang, Ziguang Ma, Yang Jiang, et al.
Sensors (Basel, Switzerland)|June 24, 2022
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si StructureXinxin Li, Zhen Deng, Ziguang Ma, et al.
Optics Express|March 17, 2021
Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystalsXiansheng Tang, Lili Han, Ziguang Ma, et al.
Nanoscale Research Letters|February 22, 2012
Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVDPeiqiang Xu, Yang Jiang, Yao Chen, et al.
Scientific Reports|August 21, 2014
Temperature-dependent photoluminescence in light-emitting diodesTaiping Lu, Ziguang Ma, Chunhua Du, et al.
Scientific Reports|August 1, 2015
Investigation of temperature-dependent photoluminescence in multi-quantum wellsYutao Fang, Lu Wang, Qingling Sun, et al.
Materials (Basel, Switzerland)|May 20, 2022
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional NitridationZhaole Su, Yangfeng Li, Xiaotao Hu, et al.
Scientific Reports|June 4, 2015
Realization of high-luminous-efficiency InGaN light-emitting diodes in the "green gap" rangeYang Jiang, Yangfeng Li, Yueqiao Li, et al.
Pageof 1

Showing results (1-10 of 9) with videos related to

Sort By:
Pageof 1
Scientific Reports|December 18, 2013
A novel wavelength-adjusting method in InGaN-based light-emitting diodesZhen Deng, Yang Jiang, Ziguang Ma, et al.
Scientific Reports|February 28, 2017
The enhanced photo absorption and carrier transportation of InGaN/GaN Quantum Wells for photodiode detector applicationsHaojun Yang, Ziguang Ma, Yang Jiang, et al.
Sensors (Basel, Switzerland)|June 24, 2022
Demonstration of SWIR Silicon-Based Photodetection by Using Thin ITO/Au/Au Nanoparticles/n-Si StructureXinxin Li, Zhen Deng, Ziguang Ma, et al.
Optics Express|March 17, 2021
Enhanced light extraction from AlGaInP-based red light-emitting diodes with photonic crystalsXiansheng Tang, Lili Han, Ziguang Ma, et al.
Nanoscale Research Letters|February 22, 2012
Analyses of 2-DEG characteristics in GaN HEMT with AlN/GaN super-lattice as barrier layer grown by MOCVDPeiqiang Xu, Yang Jiang, Yao Chen, et al.
Scientific Reports|August 21, 2014
Temperature-dependent photoluminescence in light-emitting diodesTaiping Lu, Ziguang Ma, Chunhua Du, et al.
Scientific Reports|August 1, 2015
Investigation of temperature-dependent photoluminescence in multi-quantum wellsYutao Fang, Lu Wang, Qingling Sun, et al.
Materials (Basel, Switzerland)|May 20, 2022
N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional NitridationZhaole Su, Yangfeng Li, Xiaotao Hu, et al.
Scientific Reports|June 4, 2015
Realization of high-luminous-efficiency InGaN light-emitting diodes in the "green gap" rangeYang Jiang, Yangfeng Li, Yueqiao Li, et al.
Pageof 1