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Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
The role of many-particle excitations in Coulomb blockaded transportB Muralidharan, L Siddiqui, A W GhoshJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Amine-linked single-molecule circuits: systematic trends across molecular familiesMark S Hybertsen, Latha Venkataraman, Jennifer E Klare, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Electronic and optical properties of electromigrated molecular junctionsD R Ward, G D Scott, Z K Keane, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Silicon based nanogap device for studying electrical transport phenomena in molecule-nanoparticle hybridsSebastian Strobel, Rocío Murcia Hernández, Allan G Hansen, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Comparing crystal-melt interfacial free energies through homogeneous nucleation ratesXian-Ming Bai, Mo LiJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
The ground state phase diagram of the diluted ferromagnetic Kondo-lattice modelM Stier, S Henning, W NoltingJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 24, 2011
Structure of GeO(2)-P(2)O(5) glasses studied by x-ray and neutron diffractionU Hoppe, R K Brow, B C Tischendorf, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 24, 2011
A numerical study of transport and shot noise in 2D hoppingYusuf A Kinkhabwala, Viktor A Sverdlov, Alexander N Korotkov, et al.Journal of Physics. Condensed Matter : an Institute of Physics Journal|June 24, 2011
Combined effect of quantum size and disorder in a two-dimensional armchair graphene nanoribbon with s-wave pairingZhi-Jie Qin, Gui-Ping ZhangJournal of Physics. Condensed Matter : an Institute of Physics Journal|June 23, 2011
Emission of terahertz radiation from dual grating gate plasmon-resonant emitters fabricated with InGaP/InGaAs/GaAs material systemsT Otsuji, Y M Meziani, T Nishimura, et al.Pageof 1,701