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Nanotechnology|February 29, 2012
The influence of post-growth annealing on the optical properties of InAs quantum dot chains grown on pre-patterned GaAs(100)T V Hakkarainen, V Polojärvi, A Schramm, et al.Nanotechnology|February 29, 2012
Effects of block copolymer self-assembly on optical anisotropy in azobenzene-containing PS-b-PMMA filmsA B Orofino, M F Camezzana, M J Galante, et al.Nanotechnology|March 3, 2012
Nonlinear behavior of three-terminal graphene junctions at room temperatureWonjae Kim, Pirjo Pasanen, Juha Riikonen, et al.Nanotechnology|March 13, 2012
Open-loop band excitation Kelvin probe force microscopySenli Guo, Sergei V Kalinin, Stephen JesseNanotechnology|March 3, 2012
Growth of InAs/InAsSb heterostructured nanowiresDaniele Ercolani, Mauro Gemmi, Lucia Nasi, et al.Nanotechnology|January 21, 2012
Gold nanostars: surfactant-free synthesis, 3D modelling, and two-photon photoluminescence imagingHsiangkuo Yuan, Christopher G Khoury, Hanjun Hwang, et al.Nanotechnology|March 30, 2012
Resistive switching memory properties of layer-by-layer assembled enzyme multilayersHyunhee Baek, Chanwoo Lee, Kwang-il Lim, et al.Nanotechnology|February 15, 2022
Hidden surface photovoltages revealed by pump probe KPFMValentin Aubriet, Kristell Courouble, Olivier Bardagot, et al.Nanotechnology|February 16, 2022
Analysis of Schottky barrier heights and reduced Fermi-level pinning in monolayer CVD-grown MoS2field-effect-transistorsJing Xie, Naim Md Patoary, Guantong Zhou, et al.Nanotechnology|February 16, 2022
Lithography-free and high-efficiency preparation of black phosphorous devices by direct evaporation through shadow maskJunhao Ni, Huiru Mi, Pu Tan, et al.Pageof 2,008