Sung-Min Yoon
9PUBLICATIONS
2CO-AUTHORS
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Publications (9)
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|Apr 02, 2026
Geometrical Design Schemes for the 2T0C DRAM Cell Using a Vertical Stack Transistor with a Distinctive Single IGZO Active Layer.Ji-Won Kang, Chi-Sun Hwang, Sung-Min Yoon
|Jul 02, 2025
Synergistic Approaches to Minimize Device Footprint and Energy Consumption in Vertical-Channel Synapse Transistors Using an InGaZnO Active Layer via Spacer Engineering of HfO2.Nayoung Jang, Young Ha Kwon, Nak-Jin Seong
|Jan 17, 2023
Improvement in current drivability and stability in nanoscale vertical channel thin-film transistors via band-gap engineering in In-Ga-Zn-O bilayer channel configuration.Hyun-Min Ahn, Young-Ha Kwon, Nak-Jin Seong
|Jul 05, 2022
Roles of Oxygen Interstitial Defects in Atomic-Layer Deposited InGaZnO Thin Films with Controlling the Cationic Compositions and Gate-Stack Processes for the Devices with Subμm Channel Lengths.Soo-Hyun Bae, Jong-Heon Yang, Yong-Hae Kim
|May 11, 2022
Investigations on the bias temperature stabilities of oxide thin film transistors using In-Ga-Zn-O channels prepared by atomic layer deposition.So-Jung Yoon, Nak-Jin Seong, Kyujeong Choi
|Nov 18, 2020
Implementation of oxide vertical channel TFTs with sub-150 nm channel length using atomic-layer deposited IGZO active and HfO2gate insulator.Hyun-Joo Ryoo, Nak-Jin Seong, Kyu-Jeong Choi
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