Takayoshi Oshima

7PUBLICATIONS
15CO-AUTHORS
AvionicsCrystallographyTransition metal chemistryElemental semiconductorsMetal organic frameworks
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Publications (7)

|Sep 22, 2026
Formation of near-vertical trenches and fins with flat {-201} sidewalls on (512) β-Ga2O3 via TMAH wet etching.

|Jul 17, 2026
HCl-based halide vapor phase epitaxy and selective-area HCl gas etching of (-112) β-Ga2O3.

|Jun 15, 2026
Wet etching of (-102) β-Ga2O3 with tetramethylammonium hydroxide (TMAH).

|Dec 03, 2025
Rapid homoepitaxial growth of (011) β-Ga2O3 by HCl-based halide vapor phase epitaxy.

Yuichi Oshima, Takayoshi Oshima

|Sep 08, 2025
HCl-gas etching behavior of (001) β-Ga2O3 under oxygen supply.

Yuichi Oshima, Takayoshi Oshima

|Jul 31, 2024
Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure.

Takayoshi Oshima, Rie Togashi, Yuichi Oshima

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Frequent Collaborators

4 joint publications

Yuichi Oshima

1 joint publications

Laura E Ratcliff

1 joint publications

Felix Nippert

1 joint publications

Benjamin M Janzen