John P R David
5PUBLICATIONS
7CO-AUTHORS
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Publications (5)
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|Mar 09, 2026
A Study of the Avalanche Multiplication and Excess Noise in Al x In1-x AsγSb1‑ γ Avalanche Photodiodes Lattice-Matched to GaSb.Xiao Jin, Wenguang Zhou, Yang Zhao
|Nov 25, 2024
Engineering of Impact Ionization Characteristics in GaAs/GaAsBi Multiple Quantum Well Avalanche Photodiodes.Xiaofeng Tao, Xiao Jin, Shiyuan Gao
|Aug 07, 2021
Valence band engineering of GaAsBi for low noise avalanche photodiodes.Yuchen Liu, Xin Yi, Nicholas J Bailey
|Jun 16, 2018
Demonstration of large ionization coefficient ratio in AlAs0.56Sb0.44 lattice matched to InP.Xin Yi, Shiyu Xie, Baolai Liang
|Apr 26, 2018
Assessing the Nature of the Distribution of Localised States in Bulk GaAsBi.Tom Wilson, Nicholas P Hylton, Yukihiro Harada
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