Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Hervé Boukari

1PUBLICATIONS
12CO-AUTHORS
Elemental semiconductors
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Journal

Publications (1)

Sort by Publication Date:
|Apr 01, 2022
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe<sub>2</sub>/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Debora Pierucci, Aymen Mahmoudi, Mathieu Silly

Pageof 1

Frequent Collaborators

1 joint publications

Debora Pierucci

1 joint publications

Aymen Mahmoudi

1 joint publications

Mathieu Silly

1 joint publications

Federico Bisti

1 joint publications

Fabrice Oehler

1 joint publications

Gilles Patriarche

1 joint publications

Frédéric Bonell

1 joint publications

Céline Vergnaud

1 joint publications

Matthieu Jamet

1 joint publications

Emmanuel Lhuillier

Frequent Collaborators

1 joint publications

Debora Pierucci

1 joint publications

Aymen Mahmoudi

1 joint publications

Mathieu Silly

1 joint publications

Federico Bisti

Top Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on : Jul 17, 2020

2.3K
See more related videos

Top Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on : Jul 17, 2020

2.3K
See more related videos