Céline Vergnaud

1PUBLICATIONS
12CO-AUTHORS
Elemental semiconductors
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Featured researcher

Get your video featured.

JoVEPublish with JoVE
Journal

Publications (1)

Sort by Publication Date:
|Apr 01, 2022
Evidence for highly p-type doping and type II band alignment in large scale monolayer WSe2/Se-terminated GaAs heterojunction grown by molecular beam epitaxy.

Debora Pierucci, Aymen Mahmoudi, Mathieu Silly

Pageof 1

Frequent Collaborators

1 joint publications

Debora Pierucci

1 joint publications

Aymen Mahmoudi

1 joint publications

Mathieu Silly

1 joint publications

Federico Bisti

1 joint publications

Fabrice Oehler

1 joint publications

Gilles Patriarche

1 joint publications

Frédéric Bonell

1 joint publications

Matthieu Jamet

1 joint publications

Hervé Boukari

1 joint publications

Emmanuel Lhuillier

Frequent Collaborators

1 joint publications

Debora Pierucci

1 joint publications

Aymen Mahmoudi

1 joint publications

Mathieu Silly

1 joint publications

Federico Bisti

JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies
Jove
Visualize
Contact Us

Top Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on : Jul 17, 2020

2.3K
See more related videos

Top Related Videos

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on : Jul 17, 2020

2.3K
See more related videos