Search research articles

ABOUT JoVE

Overview Leadership Blog JoVE Help Center

AUTHORS

Publishing Process Editorial Board Scope & Policies Peer Review FAQ Submit

LIBRARIANS

Testimonials Subscriptions Access Resources Library Advisory Board FAQ

RESEARCH

JoVE Journal Methods Collections JoVE Encyclopedia of Experiments Archive

EDUCATION

JoVE Core JoVE Business JoVE Science Education JoVE Lab Manual Faculty Resource Center Faculty Site

Terms & Conditions of Use

Mamoru Furuta

12PUBLICATIONS

14CO-AUTHORS

Wireless communication systems and technologies (incl. microwave and millimetrewave)Photovoltaic power systemsElectronic and magnetic properties of condensed matter; superconductivityElemental semiconductorsTransition metal chemistry

Featured researcher

Get your video featured.

Publish with JoVE

Featured researcher

Get your video featured.

Publish with JoVE

Publications (12)

Sort by Publication Date:

|Aug 03, 2024

Reliable Operation in High-Mobility Indium Oxide Thin Film Transistors.

Prashant R Ghediya, Yusaku Magari, Hikaru Sadahira

|Oct 27, 2022

Epitaxial Perovskite Single-Crystalline Heterojunctions for Filter-Free Ultra-Narrowband Detection with Tunable Spectral Responses.

Yuzhu Pan, Xin Wang, Yuhan Liao

|Sep 09, 2022

Influence of Grain Boundary Scattering on the Field-Effect Mobility of Solid-Phase Crystallized Hydrogenated Polycrystalline In<sub>2</sub>O<sub>3</sub> (In<sub>2</sub>O<sub>3</sub>:H).

Yusaku Magari, Wenchang Yeh, Toshiaki Ina

|Jan 11, 2022

Defect Passivation and Carrier Reduction Mechanisms in Hydrogen-Doped In-Ga-Zn-O (IGZO:H) Films upon Low-Temperature Annealing for Flexible Device Applications.

Rostislav Velichko, Yusaku Magari, Mamoru Furuta

|Jan 11, 2022

Nondegenerate Polycrystalline Hydrogen-Doped Indium Oxide (InO<i></i>:H) Thin Films Formed by Low-Temperature Solid-Phase Crystallization for Thin Film Transistors.

Taiki Kataoka, Yusaku Magari, Hisao Makino

|Feb 22, 2021

Quantitative analysis of annealing-induced instabilities of photo-leakage current and negative-bias-illumination-stress in a-InGaZnO thin-film transistors.

Dapeng Wang, Mamoru Furuta

Pageof 2

Frequent Collaborators

6 joint publications

Yusaku Magari

4 joint publications

Dapeng Wang

2 joint publications

Daichi Koretomo

1 joint publications

S G Mehadi Aman

1 joint publications

Hisao Makino

1 joint publications

Mutsumi Kimura

1 joint publications

Rostislav Velichko

1 joint publications

Yuzhu Pan

1 joint publications

Jing Chen

1 joint publications

Prashant R Ghediya

Frequent Collaborators

6 joint publications

Yusaku Magari

4 joint publications

Dapeng Wang

2 joint publications

Daichi Koretomo

1 joint publications

S G Mehadi Aman

Top Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on : Sep 08, 2017

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on : Nov 07, 2016

See more related videos

Top Related Videos

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors

Published on : May 24, 2020

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Low Pressure Vapor-assisted Solution Process for Tunable Band Gap Pinhole-free Methylammonium Lead Halide Perovskite Films

Published on : Sep 08, 2017

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

Published on : Nov 07, 2016

See more related videos