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The Effect of Anodization Parameters on the Aluminum Oxide Dielectric Layer of Thin-Film Transistors
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Reliable Operation in High-Mobility Indium Oxide Thin Film Transistors

Prashant R Ghediya1, Yusaku Magari1, Hikaru Sadahira2

  • 1Research Institute for Electronic Science, Hokkaido University, N20W10, Kita, Sapporo, 001-0020, Japan.

Small Methods
|August 3, 2024
PubMed
Summary

New passivation methods using Y2O3 and Er2O3 films significantly improve the reliability of Indium Oxide (In2O3) thin-film transistors (TFTs). These enhanced In2O3 TFTs show no threshold voltage shifts, paving the way for stable next-generation displays.

Keywords:
bias stress shiftindium oxidemobilityreliabilitythin‐film transistors

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