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Manipulación del vector de magnetización por campos eléctricos
D Chiba1, M Sawicki, Y Nishitani
1Semiconductor Spintronics Project, Exploratory Research for Advanced Technology, Japan Science and Technology Agency, Sanban-cho 5, Chiyoda-ku, Tokyo 102-0075, Japan.
Nature
|September 27, 2008
Resumen
Investigadores demuestran el control del campo eléctrico de la magnetización en semiconductores ferromagnéticos. Este avance permite la manipulación eléctrica directa de las propiedades magnéticas, allanando el camino para nuevos dispositivos espintrónicos compatibles con la tecnología de semiconductores.
Área de la Ciencia:
- Física de la materia condensada Física de la materia condensada
- Ciencia de los materiales Ciencia de los materiales.
- Semiconductor Spintronics es una tecnología de semiconductores.
Sus antecedentes:
- Los dispositivos semiconductores convencionales procesan la información utilizando campos eléctricos para controlar la conductividad.
- Los materiales magnéticos son cruciales para el almacenamiento de datos, con la magnetización manipulada por campos magnéticos generados por corriente.
- El control directo del campo eléctrico de la magnetización es altamente deseable para integrar funciones magnéticas en dispositivos semiconductores.
Objetivo del estudio:
- Para lograr el control eléctrico directo de la magnetización en un semiconductor ferromagnético.
- Para explorar la relación entre la concentración del portador de carga y la anisotropía magnética.
- Para demostrar un método para manipular la magnetización utilizando campos eléctricos.
Principales métodos:
- Utilizó una estructura de metal- aislador-semiconductor para aplicar campos eléctricos.
- Se investigó el semiconductor ferromagnético (Ga,Mn) As.
- Cambios correlacionados en la concentración del agujero con alteraciones en la anisotropía magnética.
Principales resultados:
- Demostró la manipulación de la dirección de magnetización únicamente por campos eléctricos en (Ga,Mn) As.
- Se estableció que la anisotropía magnética depende de la concentración del portador de carga (agujero).
- Se demostró que la aplicación de un campo eléctrico altera la concentración del agujero, controlando así la anisotropía magnética.
Conclusiones:
- El control directo del campo eléctrico de la magnetización es posible en semiconductores ferromagnéticos.
- Este método ofrece una vía para el desarrollo de dispositivos espintrónicos avanzados.
- Los hallazgos cierran la brecha entre la electrónica de semiconductores y las tecnologías magnéticas.
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