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Rompiendo los límites de velocidad de la memoria de cambio de fase.
1Data Storage Institute, Agency for Science, Technology and Research (A*STAR), Singapore.
Science (New York, N.Y.)
|June 23, 2012
Resumen
Los investigadores mejoraron la velocidad de la memoria de acceso aleatorio de cambio de fase (PCRAM) al controlar la cinética de la cristalización con baja tensión. Este avance permite velocidades de escritura más rápidas y una mejor retención de datos para los dispositivos de memoria no volátil de próxima generación.
Área de la Ciencia:
- Ciencia de los materiales Ciencia de los materiales.
- Ingeniería Eléctrica Ingeniería Eléctrica.
- Ciencias de la computación Ciencias de la computación
Sus antecedentes:
- La memoria de acceso aleatorio de cambio de fase (PCRAM) es una prometedora tecnología de almacenamiento de datos de próxima generación.
- Un desafío clave en PCRAM es equilibrar la rápida cristalización (velocidad de escritura) con las fases amorfas estables (retención de datos).
- Los métodos existentes luchan por optimizar la velocidad de escritura y la retención de datos simultáneamente.
Objetivo del estudio:
- Investigar un nuevo método para controlar la cinética de la cristalización en PCRAM.
- Para mejorar tanto la velocidad de escritura como la retención de datos de los materiales de cambio de fase.
- Para permitir operaciones de memoria no volátiles y de alta velocidad más allá de las limitaciones actuales.
Principales métodos:
- Se aplica una baja tensión constante para inducir efectos de ordenamiento (incubación) en el material de cambio de fase.
- Utilizó simulaciones de dinámica molecular ab initio para analizar la cinética del cambio de fase.
- Investigó los orígenes estructurales del aumento de la velocidad de cristalización asistida por incubación.
Principales resultados:
- Alcanzó una velocidad de cristalización de 500 picosegundos.
- Se ha demostrado la conmutación reversible de alta velocidad utilizando pulsos de 500 picosegundos.
- Reveló el mecanismo detrás del aumento de la velocidad de cristalización debido a los efectos de incubación.
Conclusiones:
- El control de la cinética de la cristalización a través del ordenamiento prestructural es una estrategia efectiva para la mejora de la PCRAM.
- Este enfoque supera el compromiso tradicional entre la velocidad de escritura y la retención de datos.
- Abre el camino para dispositivos de memoria de amplia aplicación que operan a velocidades no volátiles que exceden las tasas de transferencia de datos de gigahertz.
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