Jove
Visualize
お問い合わせ
JoVE
x logofacebook logolinkedin logoyoutube logo
JoVEについて
概要リーダーシップブログJoVEヘルプセンター
著者向け
出版プロセス編集委員会範囲と方針査読よくある質問投稿
図書館員向け
推薦の声購読アクセスリソース図書館諮問委員会よくある質問
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experimentsアーカイブ
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教員リソースセンター教員サイト
利用規約
プライバシーポリシー
ポリシー

関連する概念動画

Non-ohmic Devices00:51

Non-ohmic Devices

In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A diode...
Atomic Nuclei: Nuclear Spin State Population Distribution01:14

Atomic Nuclei: Nuclear Spin State Population Distribution

Near absolute zero temperatures, in the presence of a magnetic field, the majority of nuclei prefer the lower energy spin-up state to the higher energy spin-down state. As temperatures increase, the energy from thermal collisions distributes the spins more equally between the two states. The Boltzmann distribution equation gives the ratio of the number of spins predicted in the spin −½ (N−) and spin +½ (N+) states.
P-N junction01:11

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...
Electrochemical Systems01:24

Electrochemical Systems

Electrochemical systems provide a fascinating insight into the dynamic interplay of charged species within various phases. One notable example is the interaction between a membrane permeable to K⁺ ions but not to Cl⁻ ions, separating an aqueous KCl solution from pure water. As K⁺ ions diffuse through the membrane, they generate net charges on each phase, leading to a potential difference between them.Similarly, when a piece of Zn is immersed in an aqueous ZnSO₄ solution, the Zn metal, composed...
Electric Field of Two Equal and Opposite Charges01:30

Electric Field of Two Equal and Opposite Charges

Atoms generally contain the same number of positively and negatively charged particles, protons, and electrons. Hence, they are electrically neutral. However, the centers of the positive and negative charges do not always coincide. In such a scenario, the electric field of an atom may not be zero.
A separation of the positive and negative charges can lead to a weak, remnant effect of the positive and negative charges. The expectation is that the more the distance between the positive and...
Atomic Radii and Effective Nuclear Charge03:08

Atomic Radii and Effective Nuclear Charge

The elements in groups of the periodic table exhibit similar chemical behavior. This similarity occurs because the members of a group have the same number and distribution of electrons in their valence shells.

こちらも読む

関連記事

共著者、ジャーナル、引用グラフによってこの研究に関連する記事。

並び替え
Same author

Effect of reinforcement particle size on the tribological properties of nano-diamond filled polytetrafluoroethylene based coating.

Journal of nanoscience and nanotechnology·2009
Same author

Ambipolar electrical transport in semiconducting single-wall carbon nanotubes.

Physical review letters·2001
Same author

Engineering carbon nanotubes and nanotube circuits using electrical breakdown.

Science (New York, N.Y.)·2001
Same author

Current saturation and electrical breakdown in multiwalled carbon nanotubes.

Physical review letters·2001
Same author

Nanotubes for electronics.

Scientific American·2000
Same author

Atomic-scale desorption through electronic and vibrational excitation mechanisms.

Science (New York, N.Y.)·1995

関連する実験動画

Updated: Jul 12, 2026

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

原子スケールの負微分抵抗:原子スケールの装置への影響

I W Lyo, P Avouris

    Science (New York, N.Y.)
    |September 22, 1989
    PubMed
    まとめ

    ネガティブ・ディフェンシャル・レジスタンス (NDR) は,電子機器の迅速なスイッチングを可能にします. 研究者は,局所的な状態を通ってトンネルを掘り起こした結果,原子スケールでボロンにさらされたシリコン表面上でNDRを観察しました.

    科学分野:

    • 材料科学 材料科学とは
    • 表面科学とは,地表科学である.
    • 凝縮物質物理学 凝縮物質物理学

    背景:

    • ネガティブディフェンシャルレジスタンス (NDR) は高速の電子機器にとって極めて重要です.
    • ナノスケールのNDRを理解することは,半導体技術の進歩の鍵です.

    研究 の 目的:

    • ボロンに曝されたシリコンの表面で原子レベルでNDRの起源を調査する.
    • 原子スケールでの装置特性を達成する可能性を実証する.

    主な方法:

    • スキャントンネル顕微鏡 (STM) を利用して,原子スケールの画像を撮りました.
    • 電流-電圧の特性を分析するためにスキャニング・トンネリング光譜法 (STS) を採用した.

    主要な成果:

    • ボロンにさらされたシリコンの表面上の特定の部位の上にSTMの先端を使用してダイオード構成で観察されたNDR.
    • 特定されたNDR活性部位は原子寸法 (約1ナノメートル) である.
    • NDRは局所的で原子のような状態を通る量子トンネルに起因する.

    結論:

    • NDRは,特定の半導体表面の原子スケールで達成できます.

    さらに関連する動画

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
    09:26

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015

    関連する実験動画

    Last Updated: Jul 12, 2026

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
    05:39

    Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

    Published on: August 2, 2019

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices
    09:26

    In Situ Time-dependent Dielectric Breakdown in the Transmission Electron Microscope: A Possibility to Understand the Failure Mechanism in Microelectronic Devices

    Published on: June 26, 2015

  • 局所電子状態は,このスケールのNDR現象に責任があります.
  • 原子スケールのNDRは,新しいナノスケールの電子機器の可能性を開きます.