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グラフェン経由のリモートエピタキシは二次元材料ベースの層移転を可能にします

Yunjo Kim1, Samuel S Cruz1, Kyusang Lee1

  • 1Department of Mechanical Engineering, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139, USA.

Nature
|April 21, 2017
PubMed
まとめ

ヴァン・デル・ワールスの表表層はグラフェンによって可能であり,様々な基板で半導体成長を可能にします. この新しい方法は,非シリコンの電子とフォトニクスの恩恵を受け,グラフェンコーティングされた基板の容易な層の解放と再利用を可能にします.

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