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Updated: Jul 26, 2025

Nanofabrication of Gate-defined GaAs/AlGaAs Lateral Quantum Dots
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Published on: November 1, 2013

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ゲート制御モアール幾何学による相関磁気状態のプログラミング

Eric Anderson1, Feng-Ren Fan2,3, Jiaqi Cai1

  • 1Department of Physics, University of Washington, Seattle, WA, USA.

Science (New York, N.Y.)
|June 22, 2023
PubMed
まとめ

研究者は,グリッドの幾何学を制御することによって,モリブデン・ディテルリド (MoTe2) のモエール二重層で切り替え可能な量子状態を設計した. これにより,鉄磁気と反鉄磁気相互作用の調整が可能になり,新しい相関電子状態が生まれます.

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