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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Updated: May 6, 2026

Flash Infrared Annealing for Perovskite Solar Cell Processing

Flash Infrared Annealing for Perovskite Solar Cell Processing

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应用物理. 应用物理. 基于矿的太阳能电池

¹Department of Materials and Interfaces, Weizmann Institute of Science, Rehovot, 76100 Israel.

Science (New York, N.Y.)

|October 19, 2013

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