Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

MOSFET01:16

MOSFET

The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
In an n-MOSFET, the structure includes n-type source and drain...
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode01:20

MOSFET: Depletion Mode

Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

High-Power Terahertz Emission from Picosecond Nano-Plasma Switching Driven by Secondary Electron Emission Avalanche.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2026
Same author

Low-Power Tunable Micro-Plasma Device for Efficient and Scalable CO<sub>2</sub> Valorization.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)·2025
Same author

Active and integrated electronic metadevices for future telecommunication circuits.

Communications engineering·2025
Same author

Electronic metadevices for terahertz applications.

Nature·2023
Same author

Co-designing electronics with microfluidics for more sustainable cooling.

Nature·2020
Same author

Publisher Correction: Nanoplasma-enabled picosecond switches for ultrafast electronics.

Nature·2020

相关实验视频

Updated: Jun 14, 2026

Trapping of Micro Particles in Nanoplasmonic Optical Lattice
07:20

Trapping of Micro Particles in Nanoplasmonic Optical Lattice

Published on: September 5, 2017

6.9K

用于超快电子产品的纳米塑料支持的皮秒开关

Mohammad Samizadeh Nikoo1, Armin Jafari1, Nirmana Perera1

  • 1Power and Wide-band-gap Electronics Research Laboratory (POWERlab), Institute of Electrical Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Nature
|March 28, 2020
PubMed
概括

研究人员开发了一种用于超快信号切换的新型纳米等离子体 (纳米等离子体) 电子切换器. 这种纳米塑料装置实现了比秒转换速度, 显著超过传统的高功率太赫兹信号生成晶体管.

更多相关视频

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.1K
High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements
08:50

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

2.6K

相关实验视频

Last Updated: Jun 14, 2026

Trapping of Micro Particles in Nanoplasmonic Optical Lattice
07:20

Trapping of Micro Particles in Nanoplasmonic Optical Lattice

Published on: September 5, 2017

6.9K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

10.1K
High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements
08:50

High-Speed Magnetic Tweezers for Nanomechanical Measurements on Force-Sensitive Elements

Published on: May 12, 2023

2.6K

科学领域:

  • 固态电子设备
  • 纳米级等离子器件
  • 超快的电子设备

背景情况:

  • 超宽带信号和太赫兹波在量子测量,成像,传感,生物治疗和通信方面具有多种应用.
  • 高速电子开关对于这些应用至关重要,但像场效应和双极结晶体管这样的传统设备受到输出电容的限制.
  • 现有的技术难以满足先进电子系统所需的高速,高振幅信号切换的需求.

研究的目的:

  • 展示一种全新的芯片上电子设备,使用纳米级等离子体 (纳米等离子体) 进行超快的信号切换.
  • 通过高振幅输出信号实现皮秒开关速度,克服传统电子开关的局限性.
  • 探索纳米等离子体设备在高功率特拉赫兹信号产生和集成到各种应用中的潜力.

主要方法:

  • 基于纳米等离子体的全电子芯片设备的开发.
  • 在纳米塑料中的高电场下切换速度和上升时间的表征.
  • 纳米等离子开关与双极天线的集成用于太赫兹信号发射.

主要成果:

  • 实现超快的切换速度超过10伏/皮秒,比现场效应晶体管和传统切换器快得多.
  • 测量了极短的上升时间,低至五个皮秒,受到测量设置的限制.
  • 通过将纳米质交换机与天线集成,产生高功率的特拉赫兹信号,功率频率权衡为600毫瓦特特拉赫兹平方.

结论:

  • 展示的纳米塑料开关提供了前所未有的皮秒开关速度和高功率的太赫兹信号生成能力.
  • 设备的紧性和易于集成为成像,传感,通信和生物医学领域的进步铺平了道路.
  • 纳米塑料技术代表了超快电子技术的重大飞跃,