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编者纠正:用于超快电子的纳米塑料支持的皮秒开关

Mohammad Samizadeh Nikoo1, Armin Jafari1, Nirmana Perera1

  • 1Power and Wide-band-gap Electronics Research Laboratory (POWERlab), Institute of Electrical Engineering, École Polytechnique Fédérale de Lausanne (EPFL), Lausanne, Switzerland.

Nature
|April 17, 2020
PubMed
概括

这项研究已被修改. 请参阅最新的调查结果和分析.

科学领域:

  • 在摘要中没有说明.

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The Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET) plays a pivotal role in modern electronics thanks to its versatility and efficiency in controlling electrical currents. This device, also known as IGFET, MISFET, and MOSFET, has three main terminals: the Source, Drain, and Gate. MOSFETs are classified into n-channel or p-channel types based on the doping characteristics of their substrate and the source or drain regions.
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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
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