基于Ga2O3微电线的X射线探测器
Chongyang Zhang1, Wenjie Dou1, Xun Yang1
1Henan Key Laboratory of Diamond Optoelectronic Materials and Devices, Key Laboratory of Materials Physics, Ministry of Education, School of Physics and Microelectronics, Zhengzhou University, Zhengzhou 450052, China.
Materials (Basel, Switzerland)
|July 14, 2023
概括
用锡合的氧化物 (Ga2O3) 微线X射线探测器表现出高性能和高达623K的稳定运行.这些先进的探测器对各种X射线探测应用具有前景.
科学领域:
- 材料科学 材料科学 材料科学
- 半导体物理 半导体物理
- 探测器技术 探测器技术
背景情况:
- 射线探测器对于医学成像,工业检查和结构分析至关重要.
- 氧化 (Ga2O3) 是X射线探测器的一个有前途的材料,因为它的宽带间隙,高质量衰减和抗辐射性.
研究的目的:
- 开发和描述用于太阳盲和X射线检测的添加Ga2O3微线探测器.
- 评估这些新型探测器的性能和工作温度范围.
主要方法:
- 用锡添加的Ga2O3微电线的制造.
- 在X射线探测器设备中集成微线.
- 在不同温度的X射线照射下进行性能测试.
主要成果:
- 在X射线照射下,用Sn合的Ga2O3微电线探测器实现了1.66 × 10^2的切换比.
- 稳定的探测器运行被证实从室温高达623K.
- 高工作温度是基于Ga2O3的X射线探测器中报告的最高温度之一.
结论:
- 用锡添加的Ga2O3微线为高性能X射线探测器提供了可行的材料.
- 证明的高温稳定性为先进的探测器应用开辟了新的途径.
- 这项研究为Ga2O3X射线探测器的未来设计提供了有希望的方向.
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