由兴奋剂决定的原生氧化特性
Michele Della Ciana1, Alessandro Kovtun2, Caterina Summonte3
1Consiglio Nazionale delle Ricerche - Istituto per lo Studio dei Materiali Nanostrutturati (CNR-ISMN), via P. Gobetti 101, 40129 Bologna, Italy.
Langmuir : the ACS journal of surfaces and colloids
|August 23, 2023
概括
晶片上的原生氧化物层显示出与兴奋剂水平密切相关的特性. 临界兴奋剂度为2.1 × 1015cm-3显著影响氧化物厚度,西兰醇度和表面粗度.
科学领域:
- 材料科学 材料科学 材料科学
- 表面科学是一门学科.
- 半导体物理 半导体物理
背景情况:
- 晶体 (Si) 晶片上的原生氧化物层在空气中自发形成.
- 这些氧化物层的特性对于半导体设备的性能至关重要.
- 了解兴奋剂和氧化物特性之间的相关性对于Si晶片的生产至关重要.
研究的目的:
- 调查剂类型/水平与原生氧化层的物理化学特性之间的相关性.
- 分析氧化物层的表面,体积和Si接口在广泛的兴奋剂范围内 (10-1310-19厘米-3).
- 为了确定影响氧化物特性的关键兴奋剂度.
主要方法:
- 表面分析:接触角度,热溶解,原子力显微镜 (AFM).
- 大量和接口分析:圆测量 (厚度),X射线光辐射光谱 (XPS) (组成),凯尔文探针显微镜 (静电电荷).
- 研究了原生氧化物和蚀刻后重新生长的氧化物.
主要成果:
- 氧化物厚度显示,随着兴奋剂度的急剧变化.
- 锡兰醇度和Si中间氧化状态在≈2.1 × 1015 cm-3的临界兴奋剂度达到峰值.
- 在相同的临界兴奋剂度下,表面粗度呈现最低;确定了两个静电贡献.
结论:
- 原生氧化层的物理化学特性与剂度严格相关.
- 临界的兴奋剂水平 (≈2.1 × 1015 cm-3) 显著影响氧化物形态学,化学和静电学.
- 这些发现是可重复的,并且与Si晶片加工和设备制造相关.
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