在中的自旋光子接口的高通量识别.
Yihuang Xiong1, Céline Bourgois1,2, Natalya Sheremetyeva1
1Thayer School of Engineering, Dartmouth College, Hanover, NH 03755, USA.
Science advances
|October 4, 2023
概括
研究人员通过计算选了1000多个缺陷,以找到量子技术的最佳自旋光子接口. 三个有前途的候选人被确定为电信频段中的明亮发射器,推进量子信息科学.
科学领域:
- 量子信息科学 量子信息科学
- 材料科学 材料科学 材料科学
- 固态物理 固态物理
背景情况:
- 半导体中的颜色中心对于开发量子应用的自旋光子接口至关重要.
- 识别合适的基于的自旋光子接口是推动量子信息技术发展的关键.
- 庞大的潜在充电缺陷数量使实验性识别具有挑战性.
研究的目的:
- 以计算方式选中的1000多个充电缺陷,以寻找有前途的自旋光子接口.
- 为了识别中适合量子信息应用的新型量子缺陷.
- 在量子通信的电信频段中发现明亮的发射器.
主要方法:
- 使用高通量第一原则计算选.
- 采用单一的混合功能方法来准确地描述缺陷.
- 在中分析了1000多个充电缺陷.
主要成果:
- 在中确定了三个有前途的自旋光子接口:[公式:见文本],[公式:见文本]和[公式:见文本].
- 这些缺陷在电信频段中充当潜在的明亮发射器.
- 缺陷结合激子是这些电信频段操作的关键激发机制.
结论:
- 发现的缺陷代表了基于的量子信息技术的重大进步.
- 计算选是发现半导体中的量子缺陷的有效策略.
- 这项工作使未来的大规模计算对量子缺陷的搜索成为可能.
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