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Updated: Jul 12, 2025

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors
10:31

Plasma-assisted Molecular Beam Epitaxy of N-polar InAlN-barrier High-electron-mobility Transistors

Published on: November 24, 2016

8.6K

一个37-40 GHz的6位开关过器相位变换器使用150 nm的GaN HEMT.

Jae-Hyeok Song1, Eun-Gyu Lee1, Jae-Eun Lee1

  • 1Department of Electronics Engineering, Chungnam National University, Daejeon 34134, Republic of Korea.

Nanomaterials (Basel, Switzerland)
|October 27, 2023
PubMed
概括

为5G应用开发了一种新的6位相位变换器,实现全360度相位范围,损耗低,相位误差最小. 这个GaN HEMT设备已经准备好用于高功率射频集成.

关键词:
5G NR (n260) 是一个5G网络.获得了他的家.在STPS中,STPS就是STPS.这是一个T型过器.阶段变速器 阶段变速器

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