Jove
Visualize
联系我们
JoVE
x logofacebook logolinkedin logoyoutube logo
关于 JoVE
概览领导团队博客JoVE 帮助中心
作者
出版流程编辑委员会范围与政策同行评审常见问题投稿
图书馆员
用户评价订阅访问资源图书馆顾问委员会常见问题
研究
JoVE JournalMethods CollectionsJoVE Encyclopedia of Experiments存档
教育
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab Manual教师资源中心教师网站
使用条款与条件
隐私政策
政策

相关概念视频

Imperfections in Crystal Structure: Stoichiometric Point Defects01:26

Imperfections in Crystal Structure: Stoichiometric Point Defects

Schottky defects arise when some lattice points in a crystal, such as those in NaCl, remain unoccupied, creating lattice vacancies without disturbing the overall electrical neutrality of the crystal. This defect is common in ionic crystals where the positive and negative ions are similar in size, as seen in sodium chloride and cesium chloride. The presence of Schottky defects enables the crystal to conduct electricity to a small extent through an ionic mechanism. Electric fields cause nearby...

您也可能阅读

相关文章

通过共同作者、期刊和引用图与本文相关的文章。

排序
Same author

Caregivers' burden and psychiatric morbidity among informal caregivers of older adults: results from a national survey.

BMC geriatrics·2026
Same author

Fabrication of Terahertz Fresnel Zone Plates via Ultraprecision Mechanical Processing.

Micromachines·2026
Same author

Numerical Study of Quantifying Diffusion Effects on Deterministic Lateral Displacement at the Nanoscale.

Analytical chemistry·2026
Same author

Association between free fatty acids and adverse outcomes in patients with and without diabetes undergoing percutaneous coronary intervention.

Journal of translational internal medicine·2026
Same author

Efficient cation sieving and recovery via synergistic nanoconfinement and ionic anchoring in engineered PSS-functionalized nanochannel membranes.

Water research·2026
Same author

Testing a conceptual framework of loneliness, social isolation and health outcomes in older adults.

BMC geriatrics·2026
Same journal

Methanol Partial Oxidation on Cu(111) and PtCu(111) Single-Atom Alloy Surfaces: Effect of Surface Oxygen Coverage on Selectivity.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same journal

Yb<sup>3+</sup>-Doped GaN Nanoceramics as a New Material for Broad Band White Light Emission.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same journal

Energetic and Structural Insights into Water Confined in Hydrophobic Nanopores.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same journal

Impact of Morphology and Composition of Graphene Aerosol-Gel Particles in Thin Films on Ultrafast Carrier Dynamics Studied via Transient Absorption Spectroscopy.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same journal

Rapid Determination of SiO<sub>2</sub> Shell Thickness on Au Core Nanoparticles via Differential Centrifugal Sedimentation for SHINERS.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
Same journal

Effect of Exchange-Correlation Functionals on Schottky Barriers at Si/Metal Interfaces.

The journal of physical chemistry. C, Nanomaterials and interfaces·2026
查看所有相关文章

相关实验视频

Updated: Jul 3, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

8.8K

在Cl-Si上的缺陷介导的原子层蚀刻过程:一个原子的洞察力

Peizhi Wang1, Fengzhou Fang1,2

  • 1Centre of Micro/Nano Manufacturing Technology (MNMT-Dublin), University College Dublin, Dublin D4, Ireland.

The journal of physical chemistry. C, Nanomaterials and interfaces
|November 8, 2023
PubMed
概括
此摘要是机器生成的。

点缺陷通过降低吸附能量和激光值,显著提高了激光诱导的原子层蚀刻 (ALE). 这种缺陷介导的机制使得高效,无损的Cl-Si的层次蚀刻成为可能.

更多相关视频

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.9K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

相关实验视频

Last Updated: Jul 3, 2026

Atomically Traceable Nanostructure Fabrication
12:35

Atomically Traceable Nanostructure Fabrication

Published on: July 17, 2015

8.8K
Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
11:14

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope

Published on: May 28, 2016

13.9K
Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon
06:57

Theoretical Calculation and Experimental Verification for Dislocation Reduction in Germanium Epitaxial Layers with Semicylindrical Voids on Silicon

Published on: July 17, 2020

2.2K

科学领域:

  • 材料科学 材料科学 材料科学
  • 表面科学是一门学科.
  • 计算化学的计算化学

背景情况:

  • 原子层蚀刻 (ALE) 对于半导体制造至关重要.
  • 在原子层面上理解激光诱导ALE中的缺陷作用是有限的.

研究的目的:

  • 研究点缺陷对激光诱导的Cl-Si100的ALE的影响.
  • 阐明控制缺陷介导蚀刻的原子化机制.

主要方法:

  • 密度函数理论 (DFT) 的计算.
  • 实时依赖时间的DFT模拟.
  • 对原始和有缺陷的Si100) 表面进行比较分析.

主要成果:

  • 点缺陷在激光照射下增强了SiCl分子的脱吸.
  • 缺陷降低了脱吸能量屏障和激光强度值.
  • 通过密度状态图表观察到带间隙内的缺陷水平.

结论:

  • 一个缺陷介导的蚀刻模式解释了层次的ALE.
  • 点缺陷提高了蚀刻选择性,并使无损处理成为可能.
  • 提供了对激光诱导ALE缺陷角色的原子洞察力.