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Lu Wang1, Jing Yang1, Xiafan Zhang1

  • 1Heilongjiang Provincial Key Laboratory of Micronano Sensitive Devices and Systems, School of Electronic Engineering, Heilongjiang University, Harbin 150080, China.

PubMed
概括

研究人员通过嵌入石墨烯量子点 (GQD) 和添加PMMA层来提高基于粉的memristor性能. 这改善了开关电流比和降低了设置电压,优化了memristor应用的电气特性.