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Updated: Jul 7, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

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关于超低功率非易失性记忆的TCAD模拟研究

Ziming Xu1,2, Jinshun Bi2,3, Mengxin Liu1,2,4

  • 1Institute of Microelectronics of Chinese Academy of Sciences, Beijing 100029, China.

Micromachines
|December 23, 2023
PubMed
概括

超低功率非易失性存储器 (UltraRAM) 在低电压下提供非易失性数据保留. 通过稀释通道层,可将存储窗口显著增加80%,从而实现更快,更高性能的内存应用.

关键词:
新兴的记忆新兴的记忆低能耗开关的低能耗开关非波动性的非波动性.一个共振道结构.

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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