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低值的基于AlGaN的深紫外线激光器由纳米孔隙覆盖层启用.

Yongming Zhao, Liqiong Deng, Feng Wu

|February 15, 2024

概括

研究人员开发了一种新型的深紫外线 (DUV) 激光器,使用纳米孔化 (AlGaN) 覆盖. 这一突破使低值DUV激光操作成为可能,这对于先进的光学应用至关重要.

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科学领域:

材料科学材料科学材料科学
光电学是指光电子产品.
半导体物理半导体物理

背景情况:

深紫外线 (DUV) 激光器对于杀菌和光谱等应用是必不可少的.
实现低值DUV激光操作仍然是半导体设备制造的重大挑战.

研究的目的:

为了展示一个低值的基于AlGaN的多个量子井 (MQW) DUV激光器.
为了研究纳米多孔 (NP) n-AlGaN作为改善光学封闭的底层覆盖层的使用.

主要方法:

在蓝宝石基板上制造基于AlGaN的MQW DUV激光结构.
使用纳米孔的n-AlGaN作为底层覆盖层来降低折射率.
在室温下测量值功率密度和排放特征的光学试验.
电气I-V测量以评估NP n-AlGaN层的欧姆接触特性.

主要成果:

演示了在278nm处的DUV激光器,在室温下具有79kW/cm2的非常低值光学送功率密度.
实现横向电 (TE) -偏振 - 主导发射.
由于NP n-AlGaN的低折射率,观察到高的9.12%的光学封闭系数.
确认了与NP n-AlGaN的欧姆接触兼容性,这表明电驱动设备的潜力.

结论:

使用纳米孔的n-AlGaN作为覆盖层是实现低值激光在基于DUV AlGaN的激光器的关键.
展示的设备显示了对高效的DUV光源发电的承诺.
这项工作为设计和制造下一代低值DUV激光器件提供了宝贵的见解.