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相关概念视频

Biasing of P-N Junction01:16

Biasing of P-N Junction

2.7K
The operation of a p-n junction diode involves various biasing conditions, including forward bias, reverse bias, and equilibrium.
In equilibrium, no external voltage is applied across the p-n junction. The depletion region is formed at the junction interface due to the diffusion of carriers, which leaves behind charged dopants, acceptors on the p-side, and donors on the n-side. These immobile charges create an electric field that prevents further diffusion of carriers. The related energy band...
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Design Example: Capacitance Multiplier Circuit01:20

Design Example: Capacitance Multiplier Circuit

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In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.
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MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

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Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
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相关实验视频

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Reconfigurable Microfluidic Channel with Pin-discretized Sidewalls
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一个新道准备方案,以优化三维NAND闪存内存中的程序干扰.

Kaikai You1, Lei Jin1,2, Jianquan Jia1

  • 1Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China.

Micromachines
|February 24, 2024
PubMed
概括

这项研究引入了"Gate诱导排水泄漏 (GIDL) 预充电",以提高3D NAND闪存的可靠性. 这种方法通过增强频道潜力而没有结构变化来抑制节目干扰.

科学领域:

  • 电气工程 电气工程
  • 半导体设备物理 半导体设备物理
  • 材料科学 材料科学 材料科学

背景情况:

  • 三维 (3D) 垂直NAND闪存由于程序干扰而面临可靠性挑战.
  • 没有选择的词线 (WL) 的狭窄的操作电压窗口加剧了福勒-诺德海姆 (FN) 道.
  • 对程序和受阻字符串的矛盾电压要求使干扰抑制复杂化.

研究的目的:

  • 在3D NAND中研究通道电位和电子密度之间的关系.
  • 开发一种用于减轻3D NAND闪存中的程序干扰的新方法.
  • 为了提高3D NAND设备的可靠性和操作窗口.

主要方法:

  • 对通道潜力和电子密度动态的系统分析.
  • 引入一个"门引起的排水泄漏 (GIDL) 预付费"计划.
  • 使用技术计算机辅助设计 (TCAD) 模拟和真实数据进行验证.

主要成果:

  • 通过利用产生的孔,GIDL预充电方法有效地提高了未选择的通道潜力.
  • 在3D NAND设备中观察到明显抑制的程序干扰.
  • 在不改变设备结构或操作电压的情况下,证明了更大的通道干扰窗口.
关键词:
3D NAND闪光灯可以使用.在GIDL的预付费中.程序干扰 程序干扰

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结论:

  • GIDL预充技术为3D NAND中的程序干扰提供了一个可行的解决方案.
  • 这种方法提高了可靠性,而不需要新的制造工艺或修改操作参数.
  • 这些发现为更强大,更可靠的NAND闪存提供了途径.