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Updated: Jun 29, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
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高性能接触合 WSe 晶体管使用 TaSe 电极

Bingjie Liu1, Xiaofei Yue1, Chenxu Sheng1

  • 1School of Information Science and Technology, Fudan University, Shanghai, 200433, China.

ACS applied materials & interfaces
|April 9, 2024
PubMed
概括

研究人员通过降低接触电阻,优化了 tungsten diselenide (WSe2) 场效应晶体管 (FET). 这一突破提高了下一代设备的2D电子性能.

关键词:
接触电阻 接触电阻 接触电阻激光兴奋剂激光兴奋剂斯科特基屏障高度的高度坦二二化的使用方法tungsten diselenide 的使用情况

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相关概念视频

Metal-Semiconductor Junctions01:24

Metal-Semiconductor Junctions

The contact of metal and semiconductor can lead to the formation of a junction with either Schottky or Ohmic behavior.
Schottky Barriers
Schottky barriers arise when a metal with a work function (Φm) contacts a semiconductor with a different work function (Φs). Initially, electrons transfer until the Fermi levels of the metal and semiconductor align at equilibrium. For instance, if Φm > Φs, the semiconductor Fermi level is higher than the metal's before contact. The...
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