2D MoTe2的P/N型转换由逻辑电路的顶端门工程控制
Zhixuan Cheng1,2, Xionghui Jia1,2, Bo Han3
1State Key Lab for Mesoscopic Physics and Frontiers Science Center for Nano-Optoelectronics, School of Physics, Peking University, Beijing 100871, China.
ACS applied materials & interfaces
|July 8, 2024
概括
顶端门的电子束蒸发通过创建缺陷来诱导2H-MoTe2场效应晶体管 (FET) 中的n型兴奋剂. 这种方法可以在单一的二维材料平台上制造可靠,均的互补金属氧化物半导体 (CMOS) 逆变器.
科学领域:
- 材料科学 材料科学 材料科学
- 纳米技术 纳米技术
- 固态物理 固态物理
背景情况:
- 二维 (2D) 过渡金属二甲基化物 (TMDC) 是下一代逻辑电路的关键.
- 顶端门场效应晶体管 (FET) 为TMDC提供独立的门控制和CMOS兼容性.
- 在TMDC上制造顶门FET,由于沉积方法,可能会影响设备性能.
研究的目的:
- 调查不同顶门沉积方法对TMDC电气性能的影响.
- 利用这些影响,在2DTMDC平台上创建均的互补金属氧化物半导体 (CMOS) 设备.
- 展示使用二维材料制造功能性CMOS电路的可行性.
主要方法:
- 使用2H-MoTe2.2.制造p/n型可控制的顶端门FET阵列.
- 电子束蒸发 (EBE) 和热蒸发用于顶门沉积的比较.
- 高分辨率传输电子显微镜 (HR-TEM) 用于缺陷分析.
- 制造双顶门的MoTe2同质CMOS逆变器阵列.
主要成果:
- 在2H-MoTe2中,EBE诱导n-doping,将p型转换为n型,而热蒸发的效果最小.
- HR-TEM发现了MoTe2和MoTe2/Al2O3接口中的原子缺陷,这些缺陷是由EBE的高能原子引起的.
- 制造的CMOS逆变器显示出清晰的逻辑摆动,最小的歇斯底里,以及高产率~93%.
- 这个过程很简单,没有转移,并且与技术兼容.
结论:
- 顶门沉积方法对二维TMDC设备特征产生了重大影响,使得p/n型控制成为可能.
- 在MoTe2 FET中,可以利用EBE诱导的缺陷来形成n型通道.
- 在2DTMDC上可以实现具有高可靠性和产量的均质CMOS电路.
- 这项工作促进了2DTMDC的集成,用于实际纳米电子应用.
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