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相关概念视频

MOS Capacitor01:25

MOS Capacitor

752
A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
752
Mnemonic Devices01:23

Mnemonic Devices

69
Mnemonic devices are cognitive tools that facilitate memory retention by linking new information to familiar patterns or organizational strategies. These techniques are beneficial for remembering complex or lengthy sets of information by simplifying and structuring them in easily retrievable ways.
Acronyms
Acronyms are created by using the initial letters of a series of words to form a new word or phrase. This approach condenses complex information into a single, memorable entity. For example,...
69
Electron Configuration of Multielectron Atoms03:26

Electron Configuration of Multielectron Atoms

39.9K
The alkali metal sodium (atomic number 11) has one more electron than the neon atom. This electron must go into the lowest-energy subshell available, the 3s orbital, giving a 1s22s22p63s1 configuration. The electrons occupying the outermost shell orbital(s) (highest value of n) are called valence electrons, and those occupying the inner shell orbitals are called core electrons. Since the core electron shells correspond to noble gas electron configurations, we can abbreviate electron...
39.9K
Cycloaddition Reactions: MO Requirements for Thermal Activation01:16

Cycloaddition Reactions: MO Requirements for Thermal Activation

3.5K
Thermal cycloadditions are reactions where the source of activation energy needed to initiate the reaction is provided in the form of heat. A typical example of a thermally-allowed cycloaddition is the Diels–Alder reaction, which is a [4 + 2] cycloaddition. In contrast, a [2 + 2] cycloaddition is thermally forbidden.
3.5K
Ionic Bonding and Electron Transfer02:48

Ionic Bonding and Electron Transfer

41.3K
Ions are atoms or molecules bearing an electrical charge. A cation (a positive ion) forms when a neutral atom loses one or more electrons from its valence shell, and an anion (a negative ion) forms when a neutral atom gains one or more electrons in its valence shell. Compounds composed of ions are called ionic compounds (or salts), and their constituent ions are held together by ionic bonds: electrostatic forces of attraction between oppositely charged cations and anions. 
41.3K
Electrophilic Addition to Alkynes: Halogenation02:38

Electrophilic Addition to Alkynes: Halogenation

8.2K
Introduction
Halogenation is another class of electrophilic addition reactions where a halogen molecule gets added across a π bond. In alkynes, the presence of two π bonds allows for the addition of two equivalents of halogens (bromine or chlorine). The addition of the first halogen molecule forms a trans-dihaloalkene as the major product and the cis isomer as the minor product. Subsequent addition of the second equivalent yields the tetrahalide.
8.2K

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相关实验视频

Updated: Jun 19, 2025

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes
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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

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斯基尔米翁介导的非挥发性三元记忆.

Md Mahadi Rajib1, Namita Bindal2,3, Ravish Kumar Raj2

  • 1Department of Mechanical and Nuclear Engineering, Virginia Commonwealth University, Richmond, VA, 23284, USA.

Scientific reports
|July 26, 2024
PubMed
概括

这项研究引入了一种新的三元记忆系统,使用电压控制磁性异质变异 (VCMA) 和 skyrmions. 这种节能系统提供了2X的面积改进,适用于高密度深度神经网络.

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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相关实验视频

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科学领域:

  • 这就是Spintronics.
  • 材料科学 材料科学 材料科学
  • 计算机工程 计算机工程

背景情况:

  • 多态内存系统提供比二进制系统更高的数据密度.
  • 电压控制磁性异构 (VCMA) 为非挥发性磁性内存提供了节能写作.

研究的目的:

  • 推出一种新的,节能的,非易失性三元记忆系统.
  • 用 skyrmion 中介的 VCMA 切换来演示三元状态的实现.
  • 评估拟议的三元记忆的性能和潜在应用.

主要方法:

  • 使用垂直磁道连接 (p-MTJ) 实现三元状态.
  • 在存在室温热噪声时,研究了基于VCMA的切换.
  • 量化切换概率,能源消耗和面积效率.

主要成果:

  • 实现了99%的三元状态 {−1, 0, +1} 的切换概率,每次切换操作的能量消耗为~2 fJ.
  • 与基于STT的多态内存相比,在面积上有2倍的改善,在能源效率上有10^4倍的改善.
  • 验证了使用铁磁上,下和 skyrmion 配置的三元状态的可行性.

结论:

  • 拟议的基于VCMA的 skyrmion介导三元内存具有高度的能效,并提供了显著的面积优势.
  • 这项技术有可能实现高密度,高能效的内存计算,特别是量子化深度神经网络.
  • 该系统在热噪声下表现出强大的性能,使其适合实际应用.