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Updated: Jun 10, 2025

A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics
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A Standard and Reliable Method to Fabricate Two-Dimensional Nanoelectronics

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基于二维MoS2的无otropic突触晶体管用于通过局部电子束辐射进行神经形态计算

Lei Liu1,2, Peng Gao1,2, Mengru Zhang1,2

  • 1State Key Laboratory of Integrated Chip and System, Frontier Institute of Chip and System, Fudan University, Shanghai, 200433, China.

Advanced science (Weinheim, Baden-Wurttemberg, Germany)
|October 16, 2024
PubMed
概括

研究人员通过对同位素材料进行局部兴奋剂开发了异型人造突触. 这一突破使得先进的神经形态计算和传感系统成为可能,克服了当前异性质材料的局限性.

关键词:
异型突触是一种异型突触.有色数字识别功能.连接异质性 连接异质性电子束辐射辐射的电子束辐射.局部化兴奋剂的使用.一个多终端晶体管.神经形态计算是一种神经形态计算.

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In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx09:49

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相关概念视频

MOS Capacitor01:25

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
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